Measurement of field emission from nitrogen-doped diamond films

A. T. Sowers, B. L. Ward, S. L. English, R. J. Nemanich

Research output: Contribution to journalConference article

8 Scopus citations

Abstract

This study explores issues related to the measurement of the field emission properties of nitrogen-doped diamond grown by microwave plasma chemical vapor deposition (CVD). Growth conditions have been optimized to produce films with a low concentration of sp2-bonded carbon which results in high electrical resistance. Field emission characteristics were measured in an ultrahigh vacuum with a variable distance anode technique. For samples grown with gas phase [N]/[C] ratios less than 10, damage from micro-arcs occurred during the field emission measurements. Samples grown at higher [N]/[C] content could be measured prior to an arcing event. The occurrence of a micro-arc is related to the film properties. The measurements indicate relatively high threshold fields (> 100 V μm-1) for electron emission.

Original languageEnglish (US)
Pages (from-to)1569-1573
Number of pages5
JournalDiamond and Related Materials
Volume9
Issue number9
DOIs
StatePublished - Jan 1 2000
Externally publishedYes
Event5th International Conference on Advanced Materials - Beijing, China
Duration: Jun 13 1999Jun 18 1999

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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