Measurement of electric field across individual wurtzite GaN quantum dots using electron holography

Lin Zhou, David Smith, Martha McCartney, Tao Xu, Theodore D. Moustakas

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Electrostatic potential profiles across wurtzite AlN/GaN quantum dot (QD) superlattices grown by molecular beam epitaxy have been measured using off-axis electron holography. The profiles for individual GaN QDs show large phase shifts which can be understood in terms of spontaneous polarization and piezoelectric fields and the accumulation of positive and negative charge at the GaN/AlN interfaces. An electric field with magnitude of ∼7.8± 2 MV/cm was measured across the center of a GaN QD, in reasonable agreement with reported simulations.

Original languageEnglish (US)
Article number101905
JournalApplied Physics Letters
Volume99
Issue number10
DOIs
StatePublished - Sep 5 2011

Fingerprint

wurtzite
holography
quantum dots
electric fields
profiles
superlattices
electrons
phase shift
molecular beam epitaxy
electrostatics
polarization
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Measurement of electric field across individual wurtzite GaN quantum dots using electron holography. / Zhou, Lin; Smith, David; McCartney, Martha; Xu, Tao; Moustakas, Theodore D.

In: Applied Physics Letters, Vol. 99, No. 10, 101905, 05.09.2011.

Research output: Contribution to journalArticle

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