Measurement of electric field across individual wurtzite GaN quantum dots using electron holography

Lin Zhou; David Smith; Martha McCartney; Tao Xu; Theodore D. Moustakas

doi:10.1063/1.3636109

Measurement of electric field across individual wurtzite GaN quantum dots using electron holography

Lin Zhou, David Smith, Martha McCartney, Tao Xu, Theodore D. Moustakas

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Electrostatic potential profiles across wurtzite AlN/GaN quantum dot (QD) superlattices grown by molecular beam epitaxy have been measured using off-axis electron holography. The profiles for individual GaN QDs show large phase shifts which can be understood in terms of spontaneous polarization and piezoelectric fields and the accumulation of positive and negative charge at the GaN/AlN interfaces. An electric field with magnitude of ∼7.8± 2 MV/cm was measured across the center of a GaN QD, in reasonable agreement with reported simulations.

Original language	English (US)
Article number	101905
Journal	Applied Physics Letters
Volume	99
Issue number	10
DOIs	https://doi.org/10.1063/1.3636109
State	Published - Sep 5 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3636109

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title = "Measurement of electric field across individual wurtzite GaN quantum dots using electron holography",

abstract = "Electrostatic potential profiles across wurtzite AlN/GaN quantum dot (QD) superlattices grown by molecular beam epitaxy have been measured using off-axis electron holography. The profiles for individual GaN QDs show large phase shifts which can be understood in terms of spontaneous polarization and piezoelectric fields and the accumulation of positive and negative charge at the GaN/AlN interfaces. An electric field with magnitude of ∼7.8± 2 MV/cm was measured across the center of a GaN QD, in reasonable agreement with reported simulations.",

author = "Lin Zhou and David Smith and Martha McCartney and Tao Xu and Moustakas, {Theodore D.}",

note = "Funding Information: This work was partially supported by DOE Grant No. DE-FG02-04ER46168. The authors acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. ",

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T1 - Measurement of electric field across individual wurtzite GaN quantum dots using electron holography

AU - Zhou, Lin

AU - Smith, David

AU - McCartney, Martha

AU - Xu, Tao

AU - Moustakas, Theodore D.

N1 - Funding Information: This work was partially supported by DOE Grant No. DE-FG02-04ER46168. The authors acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

PY - 2011/9/5

Y1 - 2011/9/5

N2 - Electrostatic potential profiles across wurtzite AlN/GaN quantum dot (QD) superlattices grown by molecular beam epitaxy have been measured using off-axis electron holography. The profiles for individual GaN QDs show large phase shifts which can be understood in terms of spontaneous polarization and piezoelectric fields and the accumulation of positive and negative charge at the GaN/AlN interfaces. An electric field with magnitude of ∼7.8± 2 MV/cm was measured across the center of a GaN QD, in reasonable agreement with reported simulations.

AB - Electrostatic potential profiles across wurtzite AlN/GaN quantum dot (QD) superlattices grown by molecular beam epitaxy have been measured using off-axis electron holography. The profiles for individual GaN QDs show large phase shifts which can be understood in terms of spontaneous polarization and piezoelectric fields and the accumulation of positive and negative charge at the GaN/AlN interfaces. An electric field with magnitude of ∼7.8± 2 MV/cm was measured across the center of a GaN QD, in reasonable agreement with reported simulations.

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Measurement of electric field across individual wurtzite GaN quantum dots using electron holography

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