Measurement and simulation of partial switching in ferroelectric PZT thin-films

Lawrence T. Clark, Terje Gloerstad, Robert O. Grondin, Sandwip Dey

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Scopus citations

Abstract

In digital memory applications, metal ferroelectric metal (MFM) capacitors are typically fully switched from one polarization state to the other, with the difference in displacement current allowing determination of the cell state. However, by applying a pulse of insufficient amplitude and/or duration to fully switch the ferroelectric, such a device may be partially polarized. Here, the measurement of partial switching in sol-gel derived PZT MFM capacitors due to applied voltage pulses is reported. SPICE, a commonly used circuit simulation program, has been modified to incorporate a ferroelectric capacitor device model. The MFM device model added to SPICE is reviewed, and the simulation of partial switching is demonstrated. Simulation results modeling the PE hysteresis loops and switching transients due to applied voltage steps closely match those measured in the laboratory. We conclude with the modeling of incomplete switching due to applied pulses of insufficient amplitude to cause polarization saturation, which is attributed to the polycrystalline nature of the thin-films.

Original languageEnglish (US)
Title of host publicationIntegrated Ferroelectrics
PublisherPubl by Gordon & Breach Science Publ Inc
Pages309-320
Number of pages12
Volume3
Edition4 pt 3
StatePublished - Dec 1993
EventProceedings of the 4th International Symposium on Integrated Ferroelectrics - Monterey, CA, USA
Duration: Mar 1 1992Mar 1 1992

Other

OtherProceedings of the 4th International Symposium on Integrated Ferroelectrics
CityMonterey, CA, USA
Period3/1/923/1/92

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

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