Measurement and Simulation of GaAs FET's Under Electron-Beam Irradiation

David S. Newman, David K. Ferry, James R. Sites

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Injection of 15-kV electrons into gallium arsenide field-effect transistors leads to static current gains in excess of 107. Such gains are well above the 3600 gain expected from electron-hole pair production. A two-dimensional computer simulation has been extended to include electron-beam production of excess carriers at arbitrary points in the device structure. The resulting redistribution of potentials is shown to predict an increase in the effective channel thickness. The corresponding increase in drain current is in good agreement with the experimental measurements.

Original languageEnglish (US)
Pages (from-to)849-855
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume30
Issue number7
DOIs
StatePublished - Jul 1983

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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