Abstract

Polarization fields associated with one-monolayer-thick InN/GaN multiple quantum wells (MQWs) cause shifts of the photoluminescence peak that depend on the GaN barrier layer thickness. Diffraction contrast and aberration-corrected scanning transmission electron microscopy show that the InN QWs are well defined and coherently strained. Mapping of electrostatic potential using off-axis electron holography shows that the electric fields inside the GaN barriers decrease from ∼0.7 to ∼0.2 MV/cm as the barrier layer thickness increases from 5 to 20 nm. Atomistic tight-binding calculations agree closely with experiment, and confirm that changes in optical emission of these III-nitride quantum wells result from changes in the spontaneous and piezoelectric polarization fields in the InN quantum wells and the GaN barrier layers. Overall, this QW system provides the basis for InN-based light-emitting devices operating across a useful band of wavelengths at room temperature.

Original languageEnglish (US)
Article number125310
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume88
Issue number12
DOIs
StatePublished - Sep 25 2013

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barrier layers
Semiconductor quantum wells
Monolayers
quantum wells
Polarization
polarization
Electron holography
Aberrations
Nitrides
holography
nitrides
light emission
aberration
Electrostatics
Photoluminescence
Diffraction
Electric fields
electrostatics
Transmission electron microscopy
photoluminescence

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells. / Zhou, Lin; Dimakis, E.; Hathwar, R.; Aoki, Toshihiro; Smith, David; Moustakas, T. D.; Goodnick, Stephen; McCartney, Martha.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 88, No. 12, 125310, 25.09.2013.

Research output: Contribution to journalArticle

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abstract = "Polarization fields associated with one-monolayer-thick InN/GaN multiple quantum wells (MQWs) cause shifts of the photoluminescence peak that depend on the GaN barrier layer thickness. Diffraction contrast and aberration-corrected scanning transmission electron microscopy show that the InN QWs are well defined and coherently strained. Mapping of electrostatic potential using off-axis electron holography shows that the electric fields inside the GaN barriers decrease from ∼0.7 to ∼0.2 MV/cm as the barrier layer thickness increases from 5 to 20 nm. Atomistic tight-binding calculations agree closely with experiment, and confirm that changes in optical emission of these III-nitride quantum wells result from changes in the spontaneous and piezoelectric polarization fields in the InN quantum wells and the GaN barrier layers. Overall, this QW system provides the basis for InN-based light-emitting devices operating across a useful band of wavelengths at room temperature.",
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T1 - Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells

AU - Zhou, Lin

AU - Dimakis, E.

AU - Hathwar, R.

AU - Aoki, Toshihiro

AU - Smith, David

AU - Moustakas, T. D.

AU - Goodnick, Stephen

AU - McCartney, Martha

PY - 2013/9/25

Y1 - 2013/9/25

N2 - Polarization fields associated with one-monolayer-thick InN/GaN multiple quantum wells (MQWs) cause shifts of the photoluminescence peak that depend on the GaN barrier layer thickness. Diffraction contrast and aberration-corrected scanning transmission electron microscopy show that the InN QWs are well defined and coherently strained. Mapping of electrostatic potential using off-axis electron holography shows that the electric fields inside the GaN barriers decrease from ∼0.7 to ∼0.2 MV/cm as the barrier layer thickness increases from 5 to 20 nm. Atomistic tight-binding calculations agree closely with experiment, and confirm that changes in optical emission of these III-nitride quantum wells result from changes in the spontaneous and piezoelectric polarization fields in the InN quantum wells and the GaN barrier layers. Overall, this QW system provides the basis for InN-based light-emitting devices operating across a useful band of wavelengths at room temperature.

AB - Polarization fields associated with one-monolayer-thick InN/GaN multiple quantum wells (MQWs) cause shifts of the photoluminescence peak that depend on the GaN barrier layer thickness. Diffraction contrast and aberration-corrected scanning transmission electron microscopy show that the InN QWs are well defined and coherently strained. Mapping of electrostatic potential using off-axis electron holography shows that the electric fields inside the GaN barriers decrease from ∼0.7 to ∼0.2 MV/cm as the barrier layer thickness increases from 5 to 20 nm. Atomistic tight-binding calculations agree closely with experiment, and confirm that changes in optical emission of these III-nitride quantum wells result from changes in the spontaneous and piezoelectric polarization fields in the InN quantum wells and the GaN barrier layers. Overall, this QW system provides the basis for InN-based light-emitting devices operating across a useful band of wavelengths at room temperature.

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