MBE growth of thin hexagonal films Bi2 Te3, Bi2 Se3, and their alloys on cubic GaAs (001) substrates

Xinyu Liu; Y. P. Chen; David Smith; Y. H. Zhang; C. Liu; M. Z. Hasan; M. Dobrowolska; J. K. Furdyna; J. Fan; H. Cao; T. L. Wu; R. E. Pimpinella

doi:10.1007/978-1-4614-8121-8_11

MBE growth of thin hexagonal films Bi₂ Te₃, Bi₂ Se₃, and their alloys on cubic GaAs (001) substrates

Xinyu Liu, Y. P. Chen, David Smith, Y. H. Zhang, C. Liu, M. Z. Hasan, M. Dobrowolska, J. K. Furdyna, J. Fan, H. Cao, T. L. Wu, R. E. Pimpinella

Research output: Chapter in Book/Report/Conference proceeding › Chapter

2 Scopus citations

Abstract

Films of pseudo-hexagonal Bi₂ Te₃, Bi₂ Se₃, and their alloys were successfully grown by molecular beam epitaxy (MBE) on GaAs (001) substrates. The growth mechanism and structural properties of these films were investigated by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform and of high crystalline quality. The electronic band structure of these films was studied by angle-resolved photoemission spectroscopy (ARPES). The results confirm that these films are topological insulators, with a single Dirac cone for the topological surface states. Electric transport measurements were performed on the films, and weak anti-localization (WAL) was observed in the magnetoresistance. Tuning of conductance by gating was demonstrated in top-gated fi eld effect transistor (FET) devices fabricated from these fi lms.

Original language	English (US)
Title of host publication	Springer Series in Materials Science
Publisher	Springer Verlag
Pages	263-279
Number of pages	17
DOIs	https://doi.org/10.1007/978-1-4614-8121-8_11
State	Published - 2013

Publication series

Name	Springer Series in Materials Science
Volume	186
ISSN (Print)	0933-033X

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1007/978-1-4614-8121-8_11

Cite this

Liu, X., Chen, Y. P., Smith, D., Zhang, Y. H., Liu, C., Hasan, M. Z., Dobrowolska, M., Furdyna, J. K., Fan, J., Cao, H., Wu, T. L., & Pimpinella, R. E. (2013). MBE growth of thin hexagonal films Bi₂ Te₃, Bi₂ Se₃, and their alloys on cubic GaAs (001) substrates. In Springer Series in Materials Science (pp. 263-279). (Springer Series in Materials Science; Vol. 186). Springer Verlag. https://doi.org/10.1007/978-1-4614-8121-8_11

Liu, X, Chen, YP, Smith, D, Zhang, YH, Liu, C, Hasan, MZ, Dobrowolska, M, Furdyna, JK, Fan, J, Cao, H, Wu, TL & Pimpinella, RE 2013, MBE growth of thin hexagonal films Bi₂ Te₃, Bi₂ Se₃, and their alloys on cubic GaAs (001) substrates. in Springer Series in Materials Science. Springer Series in Materials Science, vol. 186, Springer Verlag, pp. 263-279. https://doi.org/10.1007/978-1-4614-8121-8_11

@inbook{9cb99369bc214c788fa421e64bb46718,

title = "MBE growth of thin hexagonal films Bi2 Te3, Bi2 Se3, and their alloys on cubic GaAs (001) substrates",

abstract = "Films of pseudo-hexagonal Bi2 Te3, Bi2 Se3, and their alloys were successfully grown by molecular beam epitaxy (MBE) on GaAs (001) substrates. The growth mechanism and structural properties of these films were investigated by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform and of high crystalline quality. The electronic band structure of these films was studied by angle-resolved photoemission spectroscopy (ARPES). The results confirm that these films are topological insulators, with a single Dirac cone for the topological surface states. Electric transport measurements were performed on the films, and weak anti-localization (WAL) was observed in the magnetoresistance. Tuning of conductance by gating was demonstrated in top-gated fi eld effect transistor (FET) devices fabricated from these fi lms.",

author = "Xinyu Liu and Chen, {Y. P.} and David Smith and Zhang, {Y. H.} and C. Liu and Hasan, {M. Z.} and M. Dobrowolska and Furdyna, {J. K.} and J. Fan and H. Cao and Wu, {T. L.} and Pimpinella, {R. E.}",

note = "Publisher Copyright: {\textcopyright} Springer Science+Business Media New York 2013.",

year = "2013",

doi = "10.1007/978-1-4614-8121-8_11",

language = "English (US)",

series = "Springer Series in Materials Science",

publisher = "Springer Verlag",

pages = "263--279",

booktitle = "Springer Series in Materials Science",

}

TY - CHAP

T1 - MBE growth of thin hexagonal films Bi2 Te3, Bi2 Se3, and their alloys on cubic GaAs (001) substrates

AU - Liu, Xinyu

AU - Chen, Y. P.

AU - Smith, David

AU - Zhang, Y. H.

AU - Liu, C.

AU - Hasan, M. Z.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

AU - Fan, J.

AU - Cao, H.

AU - Wu, T. L.

AU - Pimpinella, R. E.

PY - 2013

Y1 - 2013

N2 - Films of pseudo-hexagonal Bi2 Te3, Bi2 Se3, and their alloys were successfully grown by molecular beam epitaxy (MBE) on GaAs (001) substrates. The growth mechanism and structural properties of these films were investigated by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform and of high crystalline quality. The electronic band structure of these films was studied by angle-resolved photoemission spectroscopy (ARPES). The results confirm that these films are topological insulators, with a single Dirac cone for the topological surface states. Electric transport measurements were performed on the films, and weak anti-localization (WAL) was observed in the magnetoresistance. Tuning of conductance by gating was demonstrated in top-gated fi eld effect transistor (FET) devices fabricated from these fi lms.

AB - Films of pseudo-hexagonal Bi2 Te3, Bi2 Se3, and their alloys were successfully grown by molecular beam epitaxy (MBE) on GaAs (001) substrates. The growth mechanism and structural properties of these films were investigated by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform and of high crystalline quality. The electronic band structure of these films was studied by angle-resolved photoemission spectroscopy (ARPES). The results confirm that these films are topological insulators, with a single Dirac cone for the topological surface states. Electric transport measurements were performed on the films, and weak anti-localization (WAL) was observed in the magnetoresistance. Tuning of conductance by gating was demonstrated in top-gated fi eld effect transistor (FET) devices fabricated from these fi lms.

UR - http://www.scopus.com/inward/record.url?scp=84896904055&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896904055&partnerID=8YFLogxK

U2 - 10.1007/978-1-4614-8121-8_11

DO - 10.1007/978-1-4614-8121-8_11

M3 - Chapter

AN - SCOPUS:84896904055

T3 - Springer Series in Materials Science

SP - 263

EP - 279

BT - Springer Series in Materials Science

PB - Springer Verlag

ER -