MBE growth of sharp interfaces in dilute-nitride quantum wells with improved nitrogen-plasma design

Engineering & Materials Science

• Nitrogen plasma 100%
• Semiconductor quantum wells 85%
• Molecular beam epitaxy 84%
• Nitrides 65%
• Structural properties 39%
• Contamination 35%
• Nitrogen 33%
• Plasmas 33%
• Chemical beam epitaxy 33%
• Epilayers 31%
• Fluxes 29%
• Photoluminescence 29%
• Plasma sources 29%
• Secondary ion mass spectrometry 27%
• Luminescence 26%
• Electron microscopy 23%
• Transport properties 23%
• Optical properties 22%
• Vents 22%
• Diffraction 19%
• X rays 16%
• Ignition 16%
• Fabrication 13%
• Substrates 12%

Physics & Astronomy

• nitrogen plasma 68%
• nitrides 50%
• molecular beam epitaxy 46%
• quantum wells 42%
• contamination 32%
• nitrogen 26%
• vents 25%
• barrier layers 19%
• secondary ion mass spectrometry 18%
• epitaxy 18%
• ignition 17%
• x ray diffraction 15%
• electron microscopy 15%
• transport properties 14%
• luminescence 13%
• photoluminescence 12%
• optical properties 11%
• high resolution 11%
• fabrication 11%

Chemical Compounds

• Molecular Beam Epitaxy 78%
• Plasma 33%
• Chemical Beam Epitaxy 25%
• Nitrogen 24%
• Parasitic 16%
• Secondary Ion Mass Spectroscopy 14%
• Transport Property 12%
• Electron Microscopy 11%
• Photoluminescence 10%
• Optical Property 9%
• Luminiscence Type 9%
• Alloy 9%