MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates

Dmitri Lubyshev, M. Fastenau Joel, Yueming Qiu, W. K Liu Amy, J. Koerperick Edwin, T. Olesberg Jonathon, Dennis Norton, N. Faleev Nikolai, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The GaSb-based family of materials and heterostructures provides rich bandgap engineering possibilities for a variety of infrared (IR) applications. Mid-wave and long-wave IR photodetectors are progressing toward commercial manufacturing applications, but to succeed they must move from research laboratory settings to general semiconductor production and they require larger diameter substrates than the current standard 2-inch and 3-inch GaSb. Substrate vendors are beginning production of 4-inch GaSb, but another alternative is growth on 6-inch GaAs substrates with appropriate metamorphic buffer layers. We have grown generic MWIR nBn photodetectors on large diameter, 6-inch GaAs substrates by molecular beam epitaxy. Multiple metamorphic buffer architectures, including bulk GaSb nucleation, AlAsSb superlattices, and graded GaAsSb and InAlSb ternary alloys, were employed to bridge the 7.8% mismatch gap from the GaAs substrates to the GaSb-based epilayers at 6.1 - lattice-constant and beyond. Reaching ∼6.2 - extends the nBn cutoff wavelength from 4.2 to >5 μm, thus broadening the application space. The metamorphic nBn epiwafers demonstrated unique surface morphologies and crystal properties, as revealed by AFM, high-resolution XRD, and cross-section TEM. GaSb nucleation resulted in island-like surface morphology while graded ternary buffers resulted in cross-hatched surface morphology, with low root-mean-square roughness values of ∼10 - obtained. XRD determined dislocation densities as low as 2 - 107 cm-2. Device mesas were fabricated and dark currents of 1 - 10-6 A/cm2 at 150K were measured. This work demonstrates a promising path to satisfy the increasing demand for even larger area focal plane array detectors in a commercial production environment.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8704
DOIs
StatePublished - 2013
Event39th Infrared Technology and Applications - Baltimore, MD, United States
Duration: Apr 29 2013May 3 2013

Other

Other39th Infrared Technology and Applications
CountryUnited States
CityBaltimore, MD
Period4/29/135/3/13

Fingerprint

Photodetector
Gallium Arsenide
Photodetectors
Molecular beam epitaxy
photometers
Substrate
Surface Morphology
Surface morphology
Substrates
Buffer
buffers
Nucleation
Ternary
Buffers
Infrared
nucleation
Infrared radiation
Dark Current
Focal plane arrays
Epitaxy

Keywords

  • 6-inch GaAs substrates
  • GaSb
  • MBE
  • nBn photodetectors

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Lubyshev, D., Joel, M. F., Qiu, Y., Amy, W. K. L., Edwin, J. K., Jonathon, T. O., ... Honsberg, C. (2013). MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8704). [870412] https://doi.org/10.1117/12.2019039

MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates. / Lubyshev, Dmitri; Joel, M. Fastenau; Qiu, Yueming; Amy, W. K Liu; Edwin, J. Koerperick; Jonathon, T. Olesberg; Norton, Dennis; Nikolai, N. Faleev; Honsberg, Christiana.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8704 2013. 870412.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lubyshev, D, Joel, MF, Qiu, Y, Amy, WKL, Edwin, JK, Jonathon, TO, Norton, D, Nikolai, NF & Honsberg, C 2013, MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8704, 870412, 39th Infrared Technology and Applications, Baltimore, MD, United States, 4/29/13. https://doi.org/10.1117/12.2019039
Lubyshev D, Joel MF, Qiu Y, Amy WKL, Edwin JK, Jonathon TO et al. MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8704. 2013. 870412 https://doi.org/10.1117/12.2019039
Lubyshev, Dmitri ; Joel, M. Fastenau ; Qiu, Yueming ; Amy, W. K Liu ; Edwin, J. Koerperick ; Jonathon, T. Olesberg ; Norton, Dennis ; Nikolai, N. Faleev ; Honsberg, Christiana. / MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8704 2013.
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