MBE growth and ultrahigh temperature processing of high-quality AlN films

Z. Y. Fan, G. Rong, Nathan Newman, David Smith, D. Chandrasekhar

Research output: Contribution to journalArticle

Abstract

Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150 °C), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350 °C) produces high-quality AlN thin-films with narrow rocking curve widths (<2 arcmin) and low dislocation densities (< approximately 3×108 cm-2). In contrast, the use of in-situ step anneals during synthesis did not achieve similar quality materials.

Original languageEnglish (US)
Pages (from-to)O7.2.1-O7.2.6
JournalMaterials Research Society Symposium - Proceedings
Volume587
DOIs
StatePublished - 2000

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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