Abstract
Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150 °C), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350 °C) produces high-quality AlN thin-films with narrow rocking curve widths (<2 arcmin) and low dislocation densities (< approximately 3×10 8 cm -2). In contrast, the use of in-situ step anneals during synthesis did not achieve similar quality materials.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Publisher | Materials Research Society |
Volume | 587 |
State | Published - 2000 |
Externally published | Yes |
Event | Substrate Engineering Paving the Way to Epitaxy - Boston, MA, USA Duration: Nov 29 1999 → Dec 3 1999 |
Other
Other | Substrate Engineering Paving the Way to Epitaxy |
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City | Boston, MA, USA |
Period | 11/29/99 → 12/3/99 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials