MBE growth and ultrahigh temperature processing of high-quality AlN films

Z. Y. Fan, G. Rong, N. Newman, David J. Smith, D. Chandrasekhar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150 °C), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350 °C) produces high-quality AlN thin-films with narrow rocking curve widths (<2 arcmin) and low dislocation densities (< approximately 3×10 8 cm -2). In contrast, the use of in-situ step anneals during synthesis did not achieve similar quality materials.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Volume587
StatePublished - 2000
Externally publishedYes
EventSubstrate Engineering Paving the Way to Epitaxy - Boston, MA, USA
Duration: Nov 29 1999Dec 3 1999

Other

OtherSubstrate Engineering Paving the Way to Epitaxy
CityBoston, MA, USA
Period11/29/9912/3/99

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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