MBE growth and ultrahigh temperature processing of high-quality AlN films

Z. Y. Fan, G. Rong, Nathan Newman, David Smith, D. Chandrasekhar

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150°C), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350°C) produces high-quality AlN thin-films with narrow rocking curve widths (<2 arcmin) and low dislocation densities (<∼3×10 8 cm -2). In contrast, the use of in-situ step anneals during synthesis did not achieve similar quality materials.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Volume587
StatePublished - 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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