MBE growth and ultrahigh temperature processing of high-quality AlN films

Z. Y. Fan, G. Rong, Nathan Newman, David Smith, D. Chandrasekhar

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150°C), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350°C) produces high-quality AlN thin-films with narrow rocking curve widths (<2 arcmin) and low dislocation densities (<∼3×10 8 cm -2). In contrast, the use of in-situ step anneals during synthesis did not achieve similar quality materials.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
Volume587
StatePublished - 2000

Fingerprint

Growth temperature
Molecular beam epitaxy
Kinetic energy
Nitrogen
Molecular beams
Aluminum Oxide
Processing
Epitaxial growth
Sapphire
Ion beams
Thin films
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Fan, Z. Y., Rong, G., Newman, N., Smith, D., & Chandrasekhar, D. (2000). MBE growth and ultrahigh temperature processing of high-quality AlN films. In Materials Research Society Symposium - Proceedings (Vol. 587)

MBE growth and ultrahigh temperature processing of high-quality AlN films. / Fan, Z. Y.; Rong, G.; Newman, Nathan; Smith, David; Chandrasekhar, D.

Materials Research Society Symposium - Proceedings. Vol. 587 2000.

Research output: Chapter in Book/Report/Conference proceedingChapter

Fan, ZY, Rong, G, Newman, N, Smith, D & Chandrasekhar, D 2000, MBE growth and ultrahigh temperature processing of high-quality AlN films. in Materials Research Society Symposium - Proceedings. vol. 587.
Fan ZY, Rong G, Newman N, Smith D, Chandrasekhar D. MBE growth and ultrahigh temperature processing of high-quality AlN films. In Materials Research Society Symposium - Proceedings. Vol. 587. 2000
Fan, Z. Y. ; Rong, G. ; Newman, Nathan ; Smith, David ; Chandrasekhar, D. / MBE growth and ultrahigh temperature processing of high-quality AlN films. Materials Research Society Symposium - Proceedings. Vol. 587 2000.
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AB - Molecular beam epitaxial growth of AlN on sapphire and 6H-SiC has been performed utilizing mono-energetic activated nitrogen ion beams (2-80 eV kinetic energies). The growth temperature of AlN in MBE is found to be limited by the sticking coefficient of incident reactants. The combination of elevated growth temperatures (1050-1150°C), high kinetic-energy reactive nitrogen (>40 eV) and post-growth thermal processing (1150-1350°C) produces high-quality AlN thin-films with narrow rocking curve widths (<2 arcmin) and low dislocation densities (<∼3×10 8 cm -2). In contrast, the use of in-situ step anneals during synthesis did not achieve similar quality materials.

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