MBE growth and characterization of InAs quantum dots on strained GaAs 1-xSbx buffer layer for application in high efficiency solar cells

K. Y. Ban, G. M. Liu, S. P. Bremner, R. Opila, C. B. Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated InAs quantum dots (QDs) on strained GaAsSb barrier layer in different Sb compositions. Use of Sb incorporated barrier layer for QD growth gives better quantum dot properties such as density, lateral size and uniformity. Growing GaAs0.89Sb0.11 results in a doubling of QD density and a 50% decrease in size of the QDs compared to growth on GaAs. Also, size distribution of QDs became narrower after incorporating Sb. These are described based on atomic force microscope (AFM) and its analysis data. X-ray Diffraction (XRD) shows Sb composition as a function of Sb/As flux ratio. On the basis of Reflective High Energy Electron Diffraction (RHEED) oscillation surface morphology of GaAs1-xSbx is described as well.

Original languageEnglish (US)
Title of host publication33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs
StatePublished - Dec 1 2008
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA
Period5/11/085/16/08

    Fingerprint

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Ban, K. Y., Liu, G. M., Bremner, S. P., Opila, R., & Honsberg, C. B. (2008). MBE growth and characterization of InAs quantum dots on strained GaAs 1-xSbx buffer layer for application in high efficiency solar cells. In 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 [4922779] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2008.4922779