MBE growth and characterization of epitaxial MnS and ZnSe heterostructures on GaAs

Brian Skromme, Yong-Hang Zhang, W. Liu, B. Parameshwaran, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The growth and characterization of heteroepitaxial ZnSe and both rock and zinc blende MnS on (100) GaAs substrates is described. The ZnSe layers were grown using a novel thermal cyclic annealing procedure, and exhibit the narrowest double crystal X-ray diffraction rocking curves and free exciton low temperature photoluminescence peaks ever reported.

Original languageEnglish (US)
Title of host publicationGrowth, Processing, and Characterization of Semiconductor Heterostructures
PublisherPubl by Materials Research Society
Pages15-20
Number of pages6
ISBN (Print)1558992251
StatePublished - Jan 1 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume326
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Skromme, B., Zhang, Y-H., Liu, W., Parameshwaran, B., & Smith, D. (1994). MBE growth and characterization of epitaxial MnS and ZnSe heterostructures on GaAs. In Growth, Processing, and Characterization of Semiconductor Heterostructures (pp. 15-20). (Materials Research Society Symposium Proceedings; Vol. 326). Publ by Materials Research Society.