MBE-grown ZnTe/Si, a low-cost composite substrate

Yuanping Chen; Sina Simingalam; Gregory Brill; Priyalal Wijewarnasuriya; Nibir Dhar; Jae Jin Kim; David Smith

doi:10.1007/s11664-012-2032-7

MBE-grown ZnTe/Si, a low-cost composite substrate

Yuanping Chen, Sina Simingalam, Gregory Brill, Priyalal Wijewarnasuriya, Nibir Dhar, Jae Jin Kim, David Smith

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Growth of ZnTe on Si using molecular beam epitaxy (MBE) has been pursued as a new approach for a lattice-matched, large-area, low-cost alternate substrate for both II-VI and III-V compound semiconductors with lattice constants very near 6.1 Å , such as HgCdSe and GaSb-based type II strained-layer superlattices. In this paper, we report our findings on the systematic study of MBE growth parameters for both ZnTe(211) on Si(211) and ZnTe(100) on Si(100). Near-optimal growth procedures have been established for producing ZnTe/Si wafers with high crystallinity, low defect and etch pit densities, as well as excellent surface morphology. Using this baseline MBE growth process, we obtained ZnTe(211)/Si wafers with x-ray full-width at half-maximum as low as 70 arcsec.

Original language	English (US)
Pages (from-to)	2917-2924
Number of pages	8
Journal	Journal of Electronic Materials
Volume	41
Issue number	10
DOIs	https://doi.org/10.1007/s11664-012-2032-7
State	Published - Oct 2012

Keywords

HgCdSe
MBE
Si
T2-SLS
ZnSeTe
ZnTe

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-012-2032-7

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title = "MBE-grown ZnTe/Si, a low-cost composite substrate",

abstract = "Growth of ZnTe on Si using molecular beam epitaxy (MBE) has been pursued as a new approach for a lattice-matched, large-area, low-cost alternate substrate for both II-VI and III-V compound semiconductors with lattice constants very near 6.1 {\AA} , such as HgCdSe and GaSb-based type II strained-layer superlattices. In this paper, we report our findings on the systematic study of MBE growth parameters for both ZnTe(211) on Si(211) and ZnTe(100) on Si(100). Near-optimal growth procedures have been established for producing ZnTe/Si wafers with high crystallinity, low defect and etch pit densities, as well as excellent surface morphology. Using this baseline MBE growth process, we obtained ZnTe(211)/Si wafers with x-ray full-width at half-maximum as low as 70 arcsec.",

keywords = "HgCdSe, MBE, Si, T2-SLS, ZnSeTe, ZnTe",

author = "Yuanping Chen and Sina Simingalam and Gregory Brill and Priyalal Wijewarnasuriya and Nibir Dhar and Kim, {Jae Jin} and David Smith",

note = "Funding Information: The electron microscopy at Arizona State University has been supported by the U.S. Army Research Laboratory and the U.S. Army Research Office under Contract #54657 EL (Monitor: Dr. W. W. Clark). Funding Information: This work was partially supported by Air Force Office of Scientific Research through a Contract (FIATA00165G001) managed by Dr. Kitt Reinhardt.",

year = "2012",

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doi = "10.1007/s11664-012-2032-7",

language = "English (US)",

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AU - Chen, Yuanping

AU - Simingalam, Sina

AU - Brill, Gregory

AU - Wijewarnasuriya, Priyalal

AU - Dhar, Nibir

AU - Kim, Jae Jin

AU - Smith, David

N1 - Funding Information: The electron microscopy at Arizona State University has been supported by the U.S. Army Research Laboratory and the U.S. Army Research Office under Contract #54657 EL (Monitor: Dr. W. W. Clark). Funding Information: This work was partially supported by Air Force Office of Scientific Research through a Contract (FIATA00165G001) managed by Dr. Kitt Reinhardt.

PY - 2012/10

Y1 - 2012/10

N2 - Growth of ZnTe on Si using molecular beam epitaxy (MBE) has been pursued as a new approach for a lattice-matched, large-area, low-cost alternate substrate for both II-VI and III-V compound semiconductors with lattice constants very near 6.1 Å , such as HgCdSe and GaSb-based type II strained-layer superlattices. In this paper, we report our findings on the systematic study of MBE growth parameters for both ZnTe(211) on Si(211) and ZnTe(100) on Si(100). Near-optimal growth procedures have been established for producing ZnTe/Si wafers with high crystallinity, low defect and etch pit densities, as well as excellent surface morphology. Using this baseline MBE growth process, we obtained ZnTe(211)/Si wafers with x-ray full-width at half-maximum as low as 70 arcsec.

AB - Growth of ZnTe on Si using molecular beam epitaxy (MBE) has been pursued as a new approach for a lattice-matched, large-area, low-cost alternate substrate for both II-VI and III-V compound semiconductors with lattice constants very near 6.1 Å , such as HgCdSe and GaSb-based type II strained-layer superlattices. In this paper, we report our findings on the systematic study of MBE growth parameters for both ZnTe(211) on Si(211) and ZnTe(100) on Si(100). Near-optimal growth procedures have been established for producing ZnTe/Si wafers with high crystallinity, low defect and etch pit densities, as well as excellent surface morphology. Using this baseline MBE growth process, we obtained ZnTe(211)/Si wafers with x-ray full-width at half-maximum as low as 70 arcsec.

KW - HgCdSe

KW - MBE

KW - Si

KW - T2-SLS

KW - ZnSeTe

KW - ZnTe

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MBE-grown ZnTe/Si, a low-cost composite substrate

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