MBE-grown ZnTe/Si, a low-cost composite substrate

Yuanping Chen, Sina Simingalam, Gregory Brill, Priyalal Wijewarnasuriya, Nibir Dhar, Jae Jin Kim, David Smith

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Growth of ZnTe on Si using molecular beam epitaxy (MBE) has been pursued as a new approach for a lattice-matched, large-area, low-cost alternate substrate for both II-VI and III-V compound semiconductors with lattice constants very near 6.1 Å , such as HgCdSe and GaSb-based type II strained-layer superlattices. In this paper, we report our findings on the systematic study of MBE growth parameters for both ZnTe(211) on Si(211) and ZnTe(100) on Si(100). Near-optimal growth procedures have been established for producing ZnTe/Si wafers with high crystallinity, low defect and etch pit densities, as well as excellent surface morphology. Using this baseline MBE growth process, we obtained ZnTe(211)/Si wafers with x-ray full-width at half-maximum as low as 70 arcsec.

Original languageEnglish (US)
Pages (from-to)2917-2924
Number of pages8
JournalJournal of Electronic Materials
Volume41
Issue number10
DOIs
StatePublished - Oct 1 2012

Keywords

  • HgCdSe
  • MBE
  • Si
  • T2-SLS
  • ZnSeTe
  • ZnTe

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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