MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures

Dongsheng Fan, Perry C. Grant, Shui Qing Yu, Vitaliy G. Dorogan, Xian Hu, Zhaoquan Zeng, Chen Li, Michael E. Hawkridge, Mourad Benamara, Yuriy I. Mazur, Gregory J. Salamo, Shane Johnson, Zhiming M. Wang

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

GaAsBi/GaAs double quantum wells and double quantum well separate confinement heterostructures are grown at low temperatures using molecular beam epitaxy. Methods of achieving identical quantum wells in double quantum well structures without growth interruption are proposed and implemented. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that the samples have excellent structural and optical properties. The high optical quality of the samples is attributed to the surfactant effect of Bi throughout the low temperature growth of GaAs and AlGaAs layers. The proposed approach can be extended to grow laser diode structures with multiple quantum well separate confinement heterostructures containing more identical quantum wells.

Original languageEnglish (US)
Article number03C105
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume31
Issue number3
DOIs
StatePublished - May 2013

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Fan, D., Grant, P. C., Yu, S. Q., Dorogan, V. G., Hu, X., Zeng, Z., Li, C., Hawkridge, M. E., Benamara, M., Mazur, Y. I., Salamo, G. J., Johnson, S., & Wang, Z. M. (2013). MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 31(3), [03C105]. https://doi.org/10.1116/1.4792518