MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures

Dongsheng Fan; Perry C. Grant; Shui Qing Yu; Vitaliy G. Dorogan; Xian Hu; Zhaoquan Zeng; Chen Li; Michael E. Hawkridge; Mourad Benamara; Yuriy I. Mazur; Gregory J. Salamo; Shane Johnson; Zhiming M. Wang

doi:10.1116/1.4792518

MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures

Dongsheng Fan, Perry C. Grant, Shui Qing Yu, Vitaliy G. Dorogan, Xian Hu, Zhaoquan Zeng, Chen Li, Michael E. Hawkridge, Mourad Benamara, Yuriy I. Mazur, Gregory J. Salamo, Shane Johnson, Zhiming M. Wang

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

GaAsBi/GaAs double quantum wells and double quantum well separate confinement heterostructures are grown at low temperatures using molecular beam epitaxy. Methods of achieving identical quantum wells in double quantum well structures without growth interruption are proposed and implemented. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that the samples have excellent structural and optical properties. The high optical quality of the samples is attributed to the surfactant effect of Bi throughout the low temperature growth of GaAs and AlGaAs layers. The proposed approach can be extended to grow laser diode structures with multiple quantum well separate confinement heterostructures containing more identical quantum wells.

Original language	English (US)
Article number	03C105
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	31
Issue number	3
DOIs	https://doi.org/10.1116/1.4792518
State	Published - May 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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Fan, D., Grant, P. C., Yu, S. Q., Dorogan, V. G., Hu, X., Zeng, Z., Li, C., Hawkridge, M. E., Benamara, M., Mazur, Y. I., Salamo, G. J., Johnson, S., & Wang, Z. M. (2013). MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 31(3), Article 03C105. https://doi.org/10.1116/1.4792518

@article{0cb71e57ee6147088c7ffec59a0c1300,

title = "MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures",

abstract = "GaAsBi/GaAs double quantum wells and double quantum well separate confinement heterostructures are grown at low temperatures using molecular beam epitaxy. Methods of achieving identical quantum wells in double quantum well structures without growth interruption are proposed and implemented. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that the samples have excellent structural and optical properties. The high optical quality of the samples is attributed to the surfactant effect of Bi throughout the low temperature growth of GaAs and AlGaAs layers. The proposed approach can be extended to grow laser diode structures with multiple quantum well separate confinement heterostructures containing more identical quantum wells.",

author = "Dongsheng Fan and Grant, {Perry C.} and Yu, {Shui Qing} and Dorogan, {Vitaliy G.} and Xian Hu and Zhaoquan Zeng and Chen Li and Hawkridge, {Michael E.} and Mourad Benamara and Mazur, {Yuriy I.} and Salamo, {Gregory J.} and Shane Johnson and Wang, {Zhiming M.}",

note = "Funding Information: This work was supported by NSF Career Award No. DMR-1149605, MRSEC Program of NSF Grant No. DMR-0520550, Arkansas Biosciences Institute, and NSFC-51272038. ",

year = "2013",

month = may,

doi = "10.1116/1.4792518",

language = "English (US)",

volume = "31",

journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "3",

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TY - JOUR

T1 - MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures

AU - Fan, Dongsheng

AU - Grant, Perry C.

AU - Yu, Shui Qing

AU - Dorogan, Vitaliy G.

AU - Hu, Xian

AU - Zeng, Zhaoquan

AU - Li, Chen

AU - Hawkridge, Michael E.

AU - Benamara, Mourad

AU - Mazur, Yuriy I.

AU - Salamo, Gregory J.

AU - Johnson, Shane

AU - Wang, Zhiming M.

N1 - Funding Information: This work was supported by NSF Career Award No. DMR-1149605, MRSEC Program of NSF Grant No. DMR-0520550, Arkansas Biosciences Institute, and NSFC-51272038.

PY - 2013/5

Y1 - 2013/5

N2 - GaAsBi/GaAs double quantum wells and double quantum well separate confinement heterostructures are grown at low temperatures using molecular beam epitaxy. Methods of achieving identical quantum wells in double quantum well structures without growth interruption are proposed and implemented. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that the samples have excellent structural and optical properties. The high optical quality of the samples is attributed to the surfactant effect of Bi throughout the low temperature growth of GaAs and AlGaAs layers. The proposed approach can be extended to grow laser diode structures with multiple quantum well separate confinement heterostructures containing more identical quantum wells.

AB - GaAsBi/GaAs double quantum wells and double quantum well separate confinement heterostructures are grown at low temperatures using molecular beam epitaxy. Methods of achieving identical quantum wells in double quantum well structures without growth interruption are proposed and implemented. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that the samples have excellent structural and optical properties. The high optical quality of the samples is attributed to the surfactant effect of Bi throughout the low temperature growth of GaAs and AlGaAs layers. The proposed approach can be extended to grow laser diode structures with multiple quantum well separate confinement heterostructures containing more identical quantum wells.

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DO - 10.1116/1.4792518

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VL - 31

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

IS - 3

M1 - 03C105

ER -

MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures

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