Abstract
Optically pumped Ge1-ySny lasers operating at low temperature have been recently demonstrated. This article reviews the challenges to efficient lasing that arise from the intrinsic properties of alloys in the Si-Ge-Sn system. The first such challenge is the possibility that even in nominally direct gap Ge1-ySny materials, a significant fraction of pumped carriers reside in the valleys associated with the indirect gap, and therefore are not available for lasing. We find theoretically that this is indeed the case at room temperature. Possibly explaining the strong temperature dependence of lasing. A second challenge is finding appropriate barrier materials to reduce the lasing threshold power via spatial confinement. We show that strained layer Ge1-ySny/Ge1-y'Sny' multilayers are unlikely to produce the required direct gap Type-I alignment, and that even the introduction of ternary Ge1-xySixSny layers may not lead to suitable lasing structures due to giant bowing parameters in the compositional dependences of their interband transition energies.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 38-42 |
| Number of pages | 5 |
| Journal | Materials Today: Proceedings |
| Volume | 14 |
| DOIs | |
| State | Published - Jan 1 2019 |
| Event | 23rd Latin American Symposium on Solid State Physics, SLAFES 2018 - San Carlos de Bariloche, Argentina Duration: Apr 10 2018 → Apr 13 2018 |
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Keywords
- GeSn
- Lasers
- SiGeSn
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Materials physics of GeSn-based semiconductor lasers. / Menendez, Jose; Wallace, P. M.; Xu, C.; Senaratne, C. L.; Gallagher, J. D.; Kouvetakis, John.
In: Materials Today: Proceedings, Vol. 14, 01.01.2019, p. 38-42.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Materials physics of GeSn-based semiconductor lasers
AU - Menendez, Jose
AU - Wallace, P. M.
AU - Xu, C.
AU - Senaratne, C. L.
AU - Gallagher, J. D.
AU - Kouvetakis, John
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Optically pumped Ge1-ySny lasers operating at low temperature have been recently demonstrated. This article reviews the challenges to efficient lasing that arise from the intrinsic properties of alloys in the Si-Ge-Sn system. The first such challenge is the possibility that even in nominally direct gap Ge1-ySny materials, a significant fraction of pumped carriers reside in the valleys associated with the indirect gap, and therefore are not available for lasing. We find theoretically that this is indeed the case at room temperature. Possibly explaining the strong temperature dependence of lasing. A second challenge is finding appropriate barrier materials to reduce the lasing threshold power via spatial confinement. We show that strained layer Ge1-ySny/Ge1-y'Sny' multilayers are unlikely to produce the required direct gap Type-I alignment, and that even the introduction of ternary Ge1-xySixSny layers may not lead to suitable lasing structures due to giant bowing parameters in the compositional dependences of their interband transition energies.
AB - Optically pumped Ge1-ySny lasers operating at low temperature have been recently demonstrated. This article reviews the challenges to efficient lasing that arise from the intrinsic properties of alloys in the Si-Ge-Sn system. The first such challenge is the possibility that even in nominally direct gap Ge1-ySny materials, a significant fraction of pumped carriers reside in the valleys associated with the indirect gap, and therefore are not available for lasing. We find theoretically that this is indeed the case at room temperature. Possibly explaining the strong temperature dependence of lasing. A second challenge is finding appropriate barrier materials to reduce the lasing threshold power via spatial confinement. We show that strained layer Ge1-ySny/Ge1-y'Sny' multilayers are unlikely to produce the required direct gap Type-I alignment, and that even the introduction of ternary Ge1-xySixSny layers may not lead to suitable lasing structures due to giant bowing parameters in the compositional dependences of their interband transition energies.
KW - GeSn
KW - Lasers
KW - SiGeSn
UR - http://www.scopus.com/inward/record.url?scp=85066739077&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85066739077&partnerID=8YFLogxK
U2 - 10.1016/j.matpr.2019.05.048
DO - 10.1016/j.matpr.2019.05.048
M3 - Conference article
AN - SCOPUS:85066739077
VL - 14
SP - 38
EP - 42
JO - Materials Today: Proceedings
JF - Materials Today: Proceedings
SN - 2214-7853
ER -