Materials modifications using a multi-ion beam processing and lithography system

Bill R. Appleton, Sefaattin Tongay, M. Lemaitre, Brent Gila, Joel Fridmann, Paul Mazarov, Jason E. Sanabia, S. Bauerdick, Lars Bruchhaus, Ryo Mimura, Ralf Jede

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Materials modification and nanofabrication results are reported from the use of a new multi-ion beam lithography and processing system developed by the University of Florida (UF) and Raith Inc. The UF system utilizes liquid metal alloy ion sources and an ExB filter to produce nanometer-dimension, mass selected ion beams from 15 to 40 kV that can be used for direct-write ion beam lithography, sputter profiling, maskless ion implantation, ion beam mixing, and spatial and temporal ion beam assisted writing and processing over (100 × 100 mm 2) - all with nanometer precision. The initial materials modification results reported here utilized an AuSi eutectic source to fabricate lithographically patterned arrays of Au and Si nanocrystals in SiO 2 substrates by direct-write, maskless implantation and thermal annealing. The potential for nanofabrication using this system was illustrated by comparing the advantages for developing a prototype GaAs device by: (1) surface patterning GaAs with Au versus Ga ions; and by the ability to switch to Si for in-situ implantation doping of the GaAs device without removing the sample or applying additional lithography or processing steps. Capabilities and future possibilities for the system are discussed.

Original languageEnglish (US)
Pages (from-to)153-157
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume272
DOIs
StatePublished - Feb 1 2012
Externally publishedYes

Fingerprint

Ion beam lithography
Ion implantation
Lithography
Ion beams
lithography
ion beams
Nanotechnology
Processing
nanofabrication
Ion sources
implantation
Liquid metals
Nanocrystals
Eutectics
Switches
Doping (additives)
Annealing
liquid metals
eutectics
ion sources

Keywords

  • Ion beam lithography
  • Ion implantation
  • Nanocrystals
  • Nanoscale

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

Materials modifications using a multi-ion beam processing and lithography system. / Appleton, Bill R.; Tongay, Sefaattin; Lemaitre, M.; Gila, Brent; Fridmann, Joel; Mazarov, Paul; Sanabia, Jason E.; Bauerdick, S.; Bruchhaus, Lars; Mimura, Ryo; Jede, Ralf.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 272, 01.02.2012, p. 153-157.

Research output: Contribution to journalArticle

Appleton, Bill R. ; Tongay, Sefaattin ; Lemaitre, M. ; Gila, Brent ; Fridmann, Joel ; Mazarov, Paul ; Sanabia, Jason E. ; Bauerdick, S. ; Bruchhaus, Lars ; Mimura, Ryo ; Jede, Ralf. / Materials modifications using a multi-ion beam processing and lithography system. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2012 ; Vol. 272. pp. 153-157.
@article{f6e4ff7f41b24f34af72f1bf6297262b,
title = "Materials modifications using a multi-ion beam processing and lithography system",
abstract = "Materials modification and nanofabrication results are reported from the use of a new multi-ion beam lithography and processing system developed by the University of Florida (UF) and Raith Inc. The UF system utilizes liquid metal alloy ion sources and an ExB filter to produce nanometer-dimension, mass selected ion beams from 15 to 40 kV that can be used for direct-write ion beam lithography, sputter profiling, maskless ion implantation, ion beam mixing, and spatial and temporal ion beam assisted writing and processing over (100 × 100 mm 2) - all with nanometer precision. The initial materials modification results reported here utilized an AuSi eutectic source to fabricate lithographically patterned arrays of Au and Si nanocrystals in SiO 2 substrates by direct-write, maskless implantation and thermal annealing. The potential for nanofabrication using this system was illustrated by comparing the advantages for developing a prototype GaAs device by: (1) surface patterning GaAs with Au versus Ga ions; and by the ability to switch to Si for in-situ implantation doping of the GaAs device without removing the sample or applying additional lithography or processing steps. Capabilities and future possibilities for the system are discussed.",
keywords = "Ion beam lithography, Ion implantation, Nanocrystals, Nanoscale",
author = "Appleton, {Bill R.} and Sefaattin Tongay and M. Lemaitre and Brent Gila and Joel Fridmann and Paul Mazarov and Sanabia, {Jason E.} and S. Bauerdick and Lars Bruchhaus and Ryo Mimura and Ralf Jede",
year = "2012",
month = "2",
day = "1",
doi = "10.1016/j.nimb.2011.01.054",
language = "English (US)",
volume = "272",
pages = "153--157",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",

}

TY - JOUR

T1 - Materials modifications using a multi-ion beam processing and lithography system

AU - Appleton, Bill R.

AU - Tongay, Sefaattin

AU - Lemaitre, M.

AU - Gila, Brent

AU - Fridmann, Joel

AU - Mazarov, Paul

AU - Sanabia, Jason E.

AU - Bauerdick, S.

AU - Bruchhaus, Lars

AU - Mimura, Ryo

AU - Jede, Ralf

PY - 2012/2/1

Y1 - 2012/2/1

N2 - Materials modification and nanofabrication results are reported from the use of a new multi-ion beam lithography and processing system developed by the University of Florida (UF) and Raith Inc. The UF system utilizes liquid metal alloy ion sources and an ExB filter to produce nanometer-dimension, mass selected ion beams from 15 to 40 kV that can be used for direct-write ion beam lithography, sputter profiling, maskless ion implantation, ion beam mixing, and spatial and temporal ion beam assisted writing and processing over (100 × 100 mm 2) - all with nanometer precision. The initial materials modification results reported here utilized an AuSi eutectic source to fabricate lithographically patterned arrays of Au and Si nanocrystals in SiO 2 substrates by direct-write, maskless implantation and thermal annealing. The potential for nanofabrication using this system was illustrated by comparing the advantages for developing a prototype GaAs device by: (1) surface patterning GaAs with Au versus Ga ions; and by the ability to switch to Si for in-situ implantation doping of the GaAs device without removing the sample or applying additional lithography or processing steps. Capabilities and future possibilities for the system are discussed.

AB - Materials modification and nanofabrication results are reported from the use of a new multi-ion beam lithography and processing system developed by the University of Florida (UF) and Raith Inc. The UF system utilizes liquid metal alloy ion sources and an ExB filter to produce nanometer-dimension, mass selected ion beams from 15 to 40 kV that can be used for direct-write ion beam lithography, sputter profiling, maskless ion implantation, ion beam mixing, and spatial and temporal ion beam assisted writing and processing over (100 × 100 mm 2) - all with nanometer precision. The initial materials modification results reported here utilized an AuSi eutectic source to fabricate lithographically patterned arrays of Au and Si nanocrystals in SiO 2 substrates by direct-write, maskless implantation and thermal annealing. The potential for nanofabrication using this system was illustrated by comparing the advantages for developing a prototype GaAs device by: (1) surface patterning GaAs with Au versus Ga ions; and by the ability to switch to Si for in-situ implantation doping of the GaAs device without removing the sample or applying additional lithography or processing steps. Capabilities and future possibilities for the system are discussed.

KW - Ion beam lithography

KW - Ion implantation

KW - Nanocrystals

KW - Nanoscale

UR - http://www.scopus.com/inward/record.url?scp=84655170068&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84655170068&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2011.01.054

DO - 10.1016/j.nimb.2011.01.054

M3 - Article

VL - 272

SP - 153

EP - 157

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -