Materials modifications using a multi-ion beam processing and lithography system

Materials modification and nanofabrication results are reported from the use of a new multi-ion beam lithography and processing system developed by the University of Florida (UF) and Raith Inc. The UF system utilizes liquid metal alloy ion sources and an ExB filter to produce nanometer-dimension, mass selected ion beams from 15 to 40 kV that can be used for direct-write ion beam lithography, sputter profiling, maskless ion implantation, ion beam mixing, and spatial and temporal ion beam assisted writing and processing over (100 × 100 mm ²) - all with nanometer precision. The initial materials modification results reported here utilized an AuSi eutectic source to fabricate lithographically patterned arrays of Au and Si nanocrystals in SiO ₂ substrates by direct-write, maskless implantation and thermal annealing. The potential for nanofabrication using this system was illustrated by comparing the advantages for developing a prototype GaAs device by: (1) surface patterning GaAs with Au versus Ga ions; and by the ability to switch to Si for in-situ implantation doping of the GaAs device without removing the sample or applying additional lithography or processing steps. Capabilities and future possibilities for the system are discussed.