Materials characterization of Si1-x-yGexCy/Si superlattice structures

T. Laursen, D. Chandrasekhar, David Smith, J. W. Mayer, E. T. Croke, A. T. Hunter

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Pseudomorphic Si1-x-yGexCy/Si superlattice structures on Si were prepared by molecular beam epitaxy in the compositional range: 8 < x < 44% and 0 < y < 4.4%, with layer thicknesses between 5 and 35 nm. Comprehensive materials characterization was carried out by Rutherford and C-resonance backscattering combined with ion channeling. Complementary analysis was provided by secondary ion mass spectrometry (SIMS) and high-resolution transmission electron microscopy. The Si1-x-yGexCy layer composition was derived by measuring the average Ge and C concentrations by ion backscattering and the layer thicknesses from electron micrographs. Carbon depth profiles of good sensitivity were derived from SIMS profiling. The superlattice strain was measured by X-ray diffraction and usually found to be compressive. However, lattice-matched and tensile superlattice films were obtained for alloys with ∼10% Ge. The tensile film had growth defects - microtwins and stacking faults - which could be observed by TEM and detected by ion channeling.

Original languageEnglish (US)
Pages (from-to)358-362
Number of pages5
JournalThin Solid Films
Volume308-309
Issue number1-4
DOIs
StatePublished - Oct 31 1997

Keywords

  • Ion beam analysis
  • Molecular beam epitaxy
  • Silicon germanium carbon
  • Superlattice

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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