Materials characterization of Si1-x-yGexCy/Si superlattice structures

T. Laursen; D. Chandrasekhar; David Smith; J. W. Mayer; E. T. Croke; A. T. Hunter

doi:10.1016/S0040-6090(97)00578-6

Materials characterization of Si_1-x-yGe_xC_y/Si superlattice structures

T. Laursen, D. Chandrasekhar, David Smith, J. W. Mayer, E. T. Croke, A. T. Hunter

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Pseudomorphic Si_1-x-yGe_xC_y/Si superlattice structures on Si were prepared by molecular beam epitaxy in the compositional range: 8 < x < 44% and 0 < y < 4.4%, with layer thicknesses between 5 and 35 nm. Comprehensive materials characterization was carried out by Rutherford and C-resonance backscattering combined with ion channeling. Complementary analysis was provided by secondary ion mass spectrometry (SIMS) and high-resolution transmission electron microscopy. The Si_1-x-yGe_xC_y layer composition was derived by measuring the average Ge and C concentrations by ion backscattering and the layer thicknesses from electron micrographs. Carbon depth profiles of good sensitivity were derived from SIMS profiling. The superlattice strain was measured by X-ray diffraction and usually found to be compressive. However, lattice-matched and tensile superlattice films were obtained for alloys with ∼10% Ge. The tensile film had growth defects - microtwins and stacking faults - which could be observed by TEM and detected by ion channeling.

Original language	English (US)
Pages (from-to)	358-362
Number of pages	5
Journal	Thin Solid Films
Volume	308-309
Issue number	1-4
DOIs	https://doi.org/10.1016/S0040-6090(97)00578-6
State	Published - Oct 31 1997

Keywords

Ion beam analysis
Molecular beam epitaxy
Silicon germanium carbon
Superlattice

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(97)00578-6

Cite this

@article{2208a773d5524cb18b2b00e9427f432a,

title = "Materials characterization of Si1-x-yGexCy/Si superlattice structures",

abstract = "Pseudomorphic Si1-x-yGexCy/Si superlattice structures on Si were prepared by molecular beam epitaxy in the compositional range: 8 < x < 44% and 0 < y < 4.4%, with layer thicknesses between 5 and 35 nm. Comprehensive materials characterization was carried out by Rutherford and C-resonance backscattering combined with ion channeling. Complementary analysis was provided by secondary ion mass spectrometry (SIMS) and high-resolution transmission electron microscopy. The Si1-x-yGexCy layer composition was derived by measuring the average Ge and C concentrations by ion backscattering and the layer thicknesses from electron micrographs. Carbon depth profiles of good sensitivity were derived from SIMS profiling. The superlattice strain was measured by X-ray diffraction and usually found to be compressive. However, lattice-matched and tensile superlattice films were obtained for alloys with ∼10% Ge. The tensile film had growth defects - microtwins and stacking faults - which could be observed by TEM and detected by ion channeling.",

keywords = "Ion beam analysis, Molecular beam epitaxy, Silicon germanium carbon, Superlattice",

author = "T. Laursen and D. Chandrasekhar and David Smith and Mayer, {J. W.} and Croke, {E. T.} and Hunter, {A. T.}",

note = "Funding Information: Electron micrographs were recorded in the Center for High Resolution Microscopy at Arizona State University. The authors wish to acknowledge Dr. R. Hervig, Center for Solid State Science, for valuable assistance in the SIMS laboratory. Financial support was provided by the Defense Advanced Research Projects Agency, monitored by Lt. Col. G. Pomrenke under Contract Number MDA972-95-3-0047.",

year = "1997",

month = oct,

day = "31",

doi = "10.1016/S0040-6090(97)00578-6",

language = "English (US)",

volume = "308-309",

pages = "358--362",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-4",

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TY - JOUR

T1 - Materials characterization of Si1-x-yGexCy/Si superlattice structures

AU - Laursen, T.

AU - Chandrasekhar, D.

AU - Smith, David

AU - Mayer, J. W.

AU - Croke, E. T.

AU - Hunter, A. T.

N1 - Funding Information: Electron micrographs were recorded in the Center for High Resolution Microscopy at Arizona State University. The authors wish to acknowledge Dr. R. Hervig, Center for Solid State Science, for valuable assistance in the SIMS laboratory. Financial support was provided by the Defense Advanced Research Projects Agency, monitored by Lt. Col. G. Pomrenke under Contract Number MDA972-95-3-0047.

PY - 1997/10/31

Y1 - 1997/10/31

N2 - Pseudomorphic Si1-x-yGexCy/Si superlattice structures on Si were prepared by molecular beam epitaxy in the compositional range: 8 < x < 44% and 0 < y < 4.4%, with layer thicknesses between 5 and 35 nm. Comprehensive materials characterization was carried out by Rutherford and C-resonance backscattering combined with ion channeling. Complementary analysis was provided by secondary ion mass spectrometry (SIMS) and high-resolution transmission electron microscopy. The Si1-x-yGexCy layer composition was derived by measuring the average Ge and C concentrations by ion backscattering and the layer thicknesses from electron micrographs. Carbon depth profiles of good sensitivity were derived from SIMS profiling. The superlattice strain was measured by X-ray diffraction and usually found to be compressive. However, lattice-matched and tensile superlattice films were obtained for alloys with ∼10% Ge. The tensile film had growth defects - microtwins and stacking faults - which could be observed by TEM and detected by ion channeling.

AB - Pseudomorphic Si1-x-yGexCy/Si superlattice structures on Si were prepared by molecular beam epitaxy in the compositional range: 8 < x < 44% and 0 < y < 4.4%, with layer thicknesses between 5 and 35 nm. Comprehensive materials characterization was carried out by Rutherford and C-resonance backscattering combined with ion channeling. Complementary analysis was provided by secondary ion mass spectrometry (SIMS) and high-resolution transmission electron microscopy. The Si1-x-yGexCy layer composition was derived by measuring the average Ge and C concentrations by ion backscattering and the layer thicknesses from electron micrographs. Carbon depth profiles of good sensitivity were derived from SIMS profiling. The superlattice strain was measured by X-ray diffraction and usually found to be compressive. However, lattice-matched and tensile superlattice films were obtained for alloys with ∼10% Ge. The tensile film had growth defects - microtwins and stacking faults - which could be observed by TEM and detected by ion channeling.

KW - Ion beam analysis

KW - Molecular beam epitaxy

KW - Silicon germanium carbon

KW - Superlattice

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