Abstract
A wide variety of materials and processes for high k dielectrics and metal gate electrodes have been studied as replacements for poly-Si/SiO 2 or SiON in advanced CMOS devices. Care must be taken with the interfacial layer to control not only the nitrogen content but its spatial location. Nanocrystallization of the high k dielectric and the corresponding formation of charge and trapping levels associated with defects in the dielectric present one of the current challenges. Control of the workfunction of the gate electrode is shown to depend on many variables, including oxygen content and the material used for the capping layer on the metal gate. The hafnium oxide family of materials, along with metal alloy gates, is seen to provide the best solution for equivalent oxide thicknesses (EOT's) < 0.7 nm, but higher k dielectrics and thinner interfacial layers are needed below 0.7 nm. copyright The Electrochemical Society.
| Original language | English (US) |
|---|---|
| Title of host publication | ECS Transactions |
| Pages | 389-415 |
| Number of pages | 27 |
| Volume | 3 |
| Edition | 3 |
| DOIs | |
| State | Published - 2006 |
| Externally published | Yes |
| Event | Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: Oct 29 2006 → Nov 3 2006 |
Other
| Other | Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting |
|---|---|
| Country | Mexico |
| City | Cancun |
| Period | 10/29/06 → 11/3/06 |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
Cite this
Materials and processes for high k gate stacks : Results from the FEP transition center. / Osburn, C. M.; Campbell, S. A.; Demkov, A.; Eisenbraun, E.; Garfunkel, E.; Gustafsson, T.; Kingon, A. I.; Lee, J.; Lichtenwalner, D. J.; Lucovsky, G.; Ma, T. P.; Maria, J. P.; Misra, V.; Nemanich, Robert; Parsons, G. N.; Schlom, D. G.; Stemmer, S.; Wallace, R. M.; Whitten, J.
ECS Transactions. Vol. 3 3. ed. 2006. p. 389-415.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Materials and processes for high k gate stacks
T2 - Results from the FEP transition center
AU - Osburn, C. M.
AU - Campbell, S. A.
AU - Demkov, A.
AU - Eisenbraun, E.
AU - Garfunkel, E.
AU - Gustafsson, T.
AU - Kingon, A. I.
AU - Lee, J.
AU - Lichtenwalner, D. J.
AU - Lucovsky, G.
AU - Ma, T. P.
AU - Maria, J. P.
AU - Misra, V.
AU - Nemanich, Robert
AU - Parsons, G. N.
AU - Schlom, D. G.
AU - Stemmer, S.
AU - Wallace, R. M.
AU - Whitten, J.
PY - 2006
Y1 - 2006
N2 - A wide variety of materials and processes for high k dielectrics and metal gate electrodes have been studied as replacements for poly-Si/SiO 2 or SiON in advanced CMOS devices. Care must be taken with the interfacial layer to control not only the nitrogen content but its spatial location. Nanocrystallization of the high k dielectric and the corresponding formation of charge and trapping levels associated with defects in the dielectric present one of the current challenges. Control of the workfunction of the gate electrode is shown to depend on many variables, including oxygen content and the material used for the capping layer on the metal gate. The hafnium oxide family of materials, along with metal alloy gates, is seen to provide the best solution for equivalent oxide thicknesses (EOT's) < 0.7 nm, but higher k dielectrics and thinner interfacial layers are needed below 0.7 nm. copyright The Electrochemical Society.
AB - A wide variety of materials and processes for high k dielectrics and metal gate electrodes have been studied as replacements for poly-Si/SiO 2 or SiON in advanced CMOS devices. Care must be taken with the interfacial layer to control not only the nitrogen content but its spatial location. Nanocrystallization of the high k dielectric and the corresponding formation of charge and trapping levels associated with defects in the dielectric present one of the current challenges. Control of the workfunction of the gate electrode is shown to depend on many variables, including oxygen content and the material used for the capping layer on the metal gate. The hafnium oxide family of materials, along with metal alloy gates, is seen to provide the best solution for equivalent oxide thicknesses (EOT's) < 0.7 nm, but higher k dielectrics and thinner interfacial layers are needed below 0.7 nm. copyright The Electrochemical Society.
UR - http://www.scopus.com/inward/record.url?scp=33847005971&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33847005971&partnerID=8YFLogxK
U2 - 10.1149/1.2355729
DO - 10.1149/1.2355729
M3 - Conference contribution
AN - SCOPUS:33847005971
VL - 3
SP - 389
EP - 415
BT - ECS Transactions
ER -