Materials and processes for high k gate stacks: Results from the FEP transition center

C. M. Osburn; S. A. Campbell; A. Demkov; E. Eisenbraun; E. Garfunkel; T. Gustafsson; A. I. Kingon; J. Lee; D. J. Lichtenwalner; G. Lucovsky; T. P. Ma; J. P. Maria; V. Misra; Robert Nemanich; G. N. Parsons; D. G. Schlom; S. Stemmer; R. M. Wallace; J. Whitten

doi:10.1149/1.2355729

Materials and processes for high k gate stacks: Results from the FEP transition center

C. M. Osburn, S. A. Campbell, A. Demkov, E. Eisenbraun, E. Garfunkel, T. Gustafsson, A. I. Kingon, J. Lee, D. J. Lichtenwalner, G. Lucovsky, T. P. Ma, J. P. Maria, V. Misra, Robert Nemanich, G. N. Parsons, D. G. Schlom, S. Stemmer, R. M. Wallace, J. Whitten

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

A wide variety of materials and processes for high k dielectrics and metal gate electrodes have been studied as replacements for poly-Si/SiO ₂ or SiON in advanced CMOS devices. Care must be taken with the interfacial layer to control not only the nitrogen content but its spatial location. Nanocrystallization of the high k dielectric and the corresponding formation of charge and trapping levels associated with defects in the dielectric present one of the current challenges. Control of the workfunction of the gate electrode is shown to depend on many variables, including oxygen content and the material used for the capping layer on the metal gate. The hafnium oxide family of materials, along with metal alloy gates, is seen to provide the best solution for equivalent oxide thicknesses (EOT's) < 0.7 nm, but higher k dielectrics and thinner interfacial layers are needed below 0.7 nm. copyright The Electrochemical Society.

Original language	English (US)
Title of host publication	ECS Transactions
Pages	389-415
Number of pages	27
Volume	3
Edition	3
DOIs	https://doi.org/10.1149/1.2355729
State	Published - 2006
Externally published	Yes
Event	Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: Oct 29 2006 → Nov 3 2006

Other

Other	Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting
Country	Mexico
City	Cancun
Period	10/29/06 → 11/3/06

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2355729

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Osburn, C. M., Campbell, S. A., Demkov, A., Eisenbraun, E., Garfunkel, E., Gustafsson, T., Kingon, A. I., Lee, J., Lichtenwalner, D. J., Lucovsky, G., Ma, T. P., Maria, J. P., Misra, V., Nemanich, R., Parsons, G. N., Schlom, D. G., Stemmer, S., Wallace, R. M., & Whitten, J. (2006). Materials and processes for high k gate stacks: Results from the FEP transition center. In ECS Transactions (3 ed., Vol. 3, pp. 389-415) https://doi.org/10.1149/1.2355729

Materials and processes for high k gate stacks : Results from the FEP transition center. / Osburn, C. M.; Campbell, S. A.; Demkov, A.; Eisenbraun, E.; Garfunkel, E.; Gustafsson, T.; Kingon, A. I.; Lee, J.; Lichtenwalner, D. J.; Lucovsky, G.; Ma, T. P.; Maria, J. P.; Misra, V.; Nemanich, Robert; Parsons, G. N.; Schlom, D. G.; Stemmer, S.; Wallace, R. M.; Whitten, J.

ECS Transactions. Vol. 3 3. ed. 2006. p. 389-415.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Osburn, CM, Campbell, SA, Demkov, A, Eisenbraun, E, Garfunkel, E, Gustafsson, T, Kingon, AI, Lee, J, Lichtenwalner, DJ, Lucovsky, G, Ma, TP, Maria, JP, Misra, V, Nemanich, R, Parsons, GN, Schlom, DG, Stemmer, S, Wallace, RM & Whitten, J 2006, Materials and processes for high k gate stacks: Results from the FEP transition center. in ECS Transactions. 3 edn, vol. 3, pp. 389-415, Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting, Cancun, Mexico, 10/29/06. https://doi.org/10.1149/1.2355729

Osburn, C. M. ; Campbell, S. A. ; Demkov, A. ; Eisenbraun, E. ; Garfunkel, E. ; Gustafsson, T. ; Kingon, A. I. ; Lee, J. ; Lichtenwalner, D. J. ; Lucovsky, G. ; Ma, T. P. ; Maria, J. P. ; Misra, V. ; Nemanich, Robert ; Parsons, G. N. ; Schlom, D. G. ; Stemmer, S. ; Wallace, R. M. ; Whitten, J. / Materials and processes for high k gate stacks : Results from the FEP transition center. ECS Transactions. Vol. 3 3. ed. 2006. pp. 389-415

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