MATERIAL AND DEVICE CONSIDERATIONS FOR SELECTIVELY DOPED HETEROJUNCTION TRANSISTORS.

J. V. DiLorenzo, R. Dingle, M. Feuer, A. C. Gosard, R. Hendel, J. C M Hwang, A. Kastalsky, V. G. Keramkida, Richard Kiehl, P. O'Connor

Research output: Chapter in Book/Report/Conference proceedingConference contribution

31 Scopus citations
Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages578-581
Number of pages4
StatePublished - 1982
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

DiLorenzo, J. V., Dingle, R., Feuer, M., Gosard, A. C., Hendel, R., Hwang, J. C. M., Kastalsky, A., Keramkida, V. G., Kiehl, R., & O'Connor, P. (1982). MATERIAL AND DEVICE CONSIDERATIONS FOR SELECTIVELY DOPED HETEROJUNCTION TRANSISTORS. In Technical Digest - International Electron Devices Meeting (pp. 578-581). IEEE.