Abstract

We have studied the material and photovoltaic characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells (QDSCs) with different Sb contents of 0%, 5%, 15%, and 20%. All QDSCs exhibit an extended external quantum efficiency (EQE) response in the wavelength range of 960-1000 nm that corresponds to sub-bandgap photon absorption. As Sb content increases from 5% to 20%, the cutoff wavelength in the EQE extends towards longer wavelength whilst the EQE in the wavelength region of 300-880 nm is lowered due to increased defect density. Compared to the QDSC (Sb 0%), an Sb incorporation of 5% enhances the short-circuit current density from 20.65 to 22.15 mA/cm2 induced by Sb surfactant effect. Since the open-circuit voltage and fill factor of the QDSC (Sb 5%) are comparable to those of the QDSC (Sb 0%), an enhancement in solar cell efficiency (10.5%) of the QDSC (Sb 5%) is observed. Further increasing Sb content to 15% and 20% results in the degradation of solar cell performance due to increased nonradiative recombination and large valence band offset in a type-II band line-up.

Original languageEnglish (US)
Article number153103
JournalApplied Physics Letters
Volume107
Issue number15
DOIs
StatePublished - Oct 12 2015

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solar cells
quantum dots
quantum efficiency
wavelengths
short circuit currents
open circuit voltage
cut-off
surfactants
current density
degradation
valence
augmentation
defects
photons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells. / Kim, Yeongho; Ban, Keun Yong; Zhang, Chaomin; Honsberg, Christiana.

In: Applied Physics Letters, Vol. 107, No. 15, 153103, 12.10.2015.

Research output: Contribution to journalArticle

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