Maskless and resist-free rapid prototyping of three-dimensional structures through electron beam induced deposition (EBID) of carbon in combination with metal-assisted chemical etching (MaCE) of silicon

Konrad Rykaczewski, Owen J. Hildreth, Dhaval Kulkarni, Matthew R. Henry, Song Kil Kim, Ching Ping Wong, Vladimir V. Tsukruk, Andrei G. Fedorov

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

In this work, we introduce a maskless, resist-free rapid prototyping method to fabricate three-dimensional structures using electron beam induced deposition (EBID) of amorphous carbon (aC) from a residual hydrocarbon precursor in combination with metal-assisted chemical etching (MaCE) of silicon. We demonstrate that EBID-made patterned aC coating, with thickness of even a few nanometers, acts as a negative mask for the etching process and is sufficient for localized termination of the MaCE of silicon. Optimal aC deposition settings and gold film thickness for fabrication of high-aspect-ratio nanoscale 3D silicon structures are determined. The speed necessary for optimal aC feature deposition is found to be comparable to the writing speed of standard Electron Beam Lithography and the MaCE etching rate is found to be comparable to standard deep reactive ion etching (DRIE) rate.

Original languageEnglish (US)
Pages (from-to)969-973
Number of pages5
JournalACS Applied Materials and Interfaces
Volume2
Issue number4
DOIs
StatePublished - Apr 28 2010

ASJC Scopus subject areas

  • Materials Science(all)

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