Electron holography has been, used to analyse the potential profile across GaN/AlxGa1-xN heterostructures. A potential difference of (0.21 ± 0.1) and (0.38 ± 0.12) eV is experimentally observed at the GaN/Al0.19Ga0.81N and GaN/Al0.37Ga0.63N interfaces, respectively. The potential energy profiles show the presence of a positive sheet charge and a two-dimensional electron gas with a density of 1012 cm-2. These measurements are smaller than measurements by other techniques. An analysis of the technique and of observed discrepancies is presented.
|Original language||English (US)|
|Number of pages||5|
|Journal||Physica Status Solidi (A) Applied Research|
|State||Published - Nov 1 2001|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics