Mapping the Internal Potential across GaN/AlGaN Heterostructures by Electron Holography

J. Cai, Fernando Ponce, S. Tanaka, H. Omiya, Y. Nakagawa

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Electron holography has been, used to analyse the potential profile across GaN/AlxGa1-xN heterostructures. A potential difference of (0.21 ± 0.1) and (0.38 ± 0.12) eV is experimentally observed at the GaN/Al0.19Ga0.81N and GaN/Al0.37Ga0.63N interfaces, respectively. The potential energy profiles show the presence of a positive sheet charge and a two-dimensional electron gas with a density of 1012 cm-2. These measurements are smaller than measurements by other techniques. An analysis of the technique and of observed discrepancies is presented.

Original languageEnglish (US)
Pages (from-to)833-837
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume188
Issue number2
DOIs
StatePublished - Nov 1 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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