Mapping the electrostatic potential across AlGaN/AlN/GaN heterostructures using electron holography

Z. H. Wu, M. Stevens, Fernando Ponce, W. Lee, J. H. Ryou, D. Yoo, R. D. Dupuis

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Electron holography has been used to study the properties of a nominally undoped AlGaNAlNGaN heterostructures. Important characteristics such as the electrostatic potential and the two-dimensional electron gas (2DEG) distribution have been determined with high spatial resolution across the thin film structure. The origin of 2DEG electrons is directly probed by analyzing the charge distribution in the AlGaN layer. It is shown that the contribution of residual donors is trivial and the ionized donorlike surface states are the major source of the 2DEG electrons.

Original languageEnglish (US)
Article number032101
JournalApplied Physics Letters
Volume90
Issue number3
DOIs
StatePublished - 2007

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holography
electrostatics
electrons
charge distribution
electron gas
spatial resolution
high resolution
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Mapping the electrostatic potential across AlGaN/AlN/GaN heterostructures using electron holography. / Wu, Z. H.; Stevens, M.; Ponce, Fernando; Lee, W.; Ryou, J. H.; Yoo, D.; Dupuis, R. D.

In: Applied Physics Letters, Vol. 90, No. 3, 032101, 2007.

Research output: Contribution to journalArticle

Wu, Z. H. ; Stevens, M. ; Ponce, Fernando ; Lee, W. ; Ryou, J. H. ; Yoo, D. ; Dupuis, R. D. / Mapping the electrostatic potential across AlGaN/AlN/GaN heterostructures using electron holography. In: Applied Physics Letters. 2007 ; Vol. 90, No. 3.
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