@article{f384d38a3f29445487f05a26bf413f44,
title = "Mapping the electrostatic potential across AlGaN/AlN/GaN heterostructures using electron holography",
abstract = "Electron holography has been used to study the properties of a nominally undoped AlGaNAlNGaN heterostructures. Important characteristics such as the electrostatic potential and the two-dimensional electron gas (2DEG) distribution have been determined with high spatial resolution across the thin film structure. The origin of 2DEG electrons is directly probed by analyzing the charge distribution in the AlGaN layer. It is shown that the contribution of residual donors is trivial and the ionized donorlike surface states are the major source of the 2DEG electrons.",
author = "Wu, {Z. H.} and M. Stevens and Fernando Ponce and W. Lee and Ryou, {J. H.} and D. Yoo and Dupuis, {R. D.}",
note = "Funding Information: Research at ASU was supported by a grant from Nichia Corporation. The authors at ASU acknowledge use of facilities in the Center for High Resolution Electron Microscopy at ASU. The authors at Georgia Tech acknowledge DARPA/MTO for support of this work under the Wide Bandgap Electronics Program, Contract No. FA9550-04-1-0415 (M. Rosker and G. Witt). One of the authors (R.D.D.) gratefully acknowledges the support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.",
year = "2007",
doi = "10.1063/1.2431716",
language = "English (US)",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "3",
}