@article{61292428211f4a1b8107e3cde9707fb5,
title = "Mapping polarization fields in Al0.85In0.15N/AlN/GaN heterostructures",
author = "Lin Zhou and Cullen, {David A.} and David Smith and Anas Mouti and M. Gonschorek and E. Feltin and Carlin, {J. F.} and N. Grandjean and Martha McCartney",
note = "Funding Information: References [1] J. Kuzm{\'i}k, IEEE Electron Device Lett. 22, (2001) 510. [2] M. Gonschorek, et. al., Appl. Phys. Lett. 89, 062106 (2006). [3] L. Zhou, et. al., Appl. Phys. Lett. submitted. [4] M. Gonschorek, et. al., J. Appl. Phys. 103, (2008) 093714. [5] This work was supported by a contract from Wright Patterson Air Force Base (Monitor: C. Funding Information: Bozada) and the Swiss National Science Foundation (Contract No. 200021-107642/1). We acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.",
year = "2009",
month = jul,
doi = "10.1017/S1431927609097499",
language = "English (US)",
volume = "15",
pages = "1048--1049",
journal = "Microscopy and Microanalysis",
issn = "1431-9276",
publisher = "Cambridge University Press",
number = "SUPPL. 2",
}