Mapping of electrostatic potential in deep submicron CMOS devices by electron holography

M. A. Gribelyuk, Martha McCartney, Jing Li, C. S. Murthy, P. Ronsheim, B. Doris, J. S. McMurray, S. Hegde, David Smith

Research output: Contribution to journalArticle

90 Citations (Scopus)

Abstract

The two-dimensional maps of electrostatic potential were obtained in deep submicron complementary metal oxide semiconductor (CMOS) devices using off-axis electron holography. A close agreement was found in estimates of junction depth and variation in electrostatic potential obtained by electron holography, secondary ion mass spectroscopy, and process simulation. It was demonstrated by the results that electron holography could become an effective method for quantative two-dimensional analysis of dopant diffusion in deep-submicron devices.

Original languageEnglish (US)
Article number025502
Pages (from-to)255021-255024
Number of pages4
JournalPhysical Review Letters
Volume89
Issue number2
StatePublished - Jul 8 2002

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semiconductor devices
holography
CMOS
electrostatics
electrons
dimensional analysis
mass spectroscopy
estimates
ions
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Gribelyuk, M. A., McCartney, M., Li, J., Murthy, C. S., Ronsheim, P., Doris, B., ... Smith, D. (2002). Mapping of electrostatic potential in deep submicron CMOS devices by electron holography. Physical Review Letters, 89(2), 255021-255024. [025502].

Mapping of electrostatic potential in deep submicron CMOS devices by electron holography. / Gribelyuk, M. A.; McCartney, Martha; Li, Jing; Murthy, C. S.; Ronsheim, P.; Doris, B.; McMurray, J. S.; Hegde, S.; Smith, David.

In: Physical Review Letters, Vol. 89, No. 2, 025502, 08.07.2002, p. 255021-255024.

Research output: Contribution to journalArticle

Gribelyuk, MA, McCartney, M, Li, J, Murthy, CS, Ronsheim, P, Doris, B, McMurray, JS, Hegde, S & Smith, D 2002, 'Mapping of electrostatic potential in deep submicron CMOS devices by electron holography', Physical Review Letters, vol. 89, no. 2, 025502, pp. 255021-255024.
Gribelyuk MA, McCartney M, Li J, Murthy CS, Ronsheim P, Doris B et al. Mapping of electrostatic potential in deep submicron CMOS devices by electron holography. Physical Review Letters. 2002 Jul 8;89(2):255021-255024. 025502.
Gribelyuk, M. A. ; McCartney, Martha ; Li, Jing ; Murthy, C. S. ; Ronsheim, P. ; Doris, B. ; McMurray, J. S. ; Hegde, S. ; Smith, David. / Mapping of electrostatic potential in deep submicron CMOS devices by electron holography. In: Physical Review Letters. 2002 ; Vol. 89, No. 2. pp. 255021-255024.
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