Mapping in concentration, strain, and internal electric field in InGaN/GaN quantum well structure

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Abstract

The concentration of indium, strain, and internal electric field present in InGaN/GaN quantum well were investigated. Z-contrast scanning transmission electron microscopy was used for mapping In concentration with atomic resolution. The internal electric fields were determined by differentiating phase images obtained by electron holography. Results show that local fluctuations of In concentration caused inhomogeneities in the internal electric fields.

Original languageEnglish (US)
Pages (from-to)2103-2105
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number12
DOIs
StatePublished - Mar 22 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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