The concentration of indium, strain, and internal electric field present in InGaN/GaN quantum well were investigated. Z-contrast scanning transmission electron microscopy was used for mapping In concentration with atomic resolution. The internal electric fields were determined by differentiating phase images obtained by electron holography. Results show that local fluctuations of In concentration caused inhomogeneities in the internal electric fields.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)