Mapping electrostatic profiles across axial p-n junctions in Si nanowires using off-axis electron holography

Zhaofeng Gan, Daniel E. Perea, Jinkyoung Yoo, S. Tom Picraux, David Smith, Martha McCartney

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Si nanowires (NWs) with axial p-n junctions were grown by the vapor-liquid-solid method. Transmission electron microscopy and electron holography were used to characterize the microstructure and electrostatic properties. Measurement of the potential profile showed the presence of a p-n junction with a height of 1.0 ± 0.3 V. A Schottky barrier was observed at the end of the NW due to the Au catalyst particle. Comparison with simulations indicated dopant concentrations of 1019 cm-3 for donors and 1017 cm-3 for acceptors. These results confirm the benefit of combining off-axis electron holography with simulations for determining localized information about the electrically active dopant distributions in nanowire structures.

Original languageEnglish (US)
Article number153108
JournalApplied Physics Letters
Volume103
Issue number15
DOIs
StatePublished - Oct 7 2013

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p-n junctions
holography
nanowires
electrostatics
profiles
electrons
simulation
vapors
catalysts
transmission electron microscopy
microstructure
liquids

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Mapping electrostatic profiles across axial p-n junctions in Si nanowires using off-axis electron holography. / Gan, Zhaofeng; Perea, Daniel E.; Yoo, Jinkyoung; Tom Picraux, S.; Smith, David; McCartney, Martha.

In: Applied Physics Letters, Vol. 103, No. 15, 153108, 07.10.2013.

Research output: Contribution to journalArticle

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