Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

Martha McCartney; Fernando Ponce; Juan Cai; D. P. Bour

doi:10.1063/1.126577

Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

Martha McCartney, Fernando Ponce, Juan Cai, D. P. Bour

Physics

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

Electron holography has been used to image electrostatic potential variations across an AlGaN/ InGaN/AlGaN heterojunction diode. Features in the energy profile have been interpreted in terms of the expected built-in voltage across the p-n junction of the diode as well as contributions from the spontaneous and piezoelectric polarization fields within the material. Additional profile features indicate the presence of two-dimensional electron gas at the upper interface of the InGaN well, and evidence for hole accumulation close to the lower interface.

Original language	English (US)
Pages (from-to)	3055-3057
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	21
DOIs	https://doi.org/10.1063/1.126577
State	Published - May 22 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.126577

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@article{c9b0866e3c6a425b926e3ea9c32fc67d,

title = "Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography",

abstract = "Electron holography has been used to image electrostatic potential variations across an AlGaN/ InGaN/AlGaN heterojunction diode. Features in the energy profile have been interpreted in terms of the expected built-in voltage across the p-n junction of the diode as well as contributions from the spontaneous and piezoelectric polarization fields within the material. Additional profile features indicate the presence of two-dimensional electron gas at the upper interface of the InGaN well, and evidence for hole accumulation close to the lower interface.",

author = "Martha McCartney and Fernando Ponce and Juan Cai and Bour, {D. P.}",

year = "2000",

month = may,

day = "22",

doi = "10.1063/1.126577",

language = "English (US)",

volume = "76",

pages = "3055--3057",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

AU - McCartney, Martha

AU - Ponce, Fernando

AU - Cai, Juan

AU - Bour, D. P.

PY - 2000/5/22

Y1 - 2000/5/22

N2 - Electron holography has been used to image electrostatic potential variations across an AlGaN/ InGaN/AlGaN heterojunction diode. Features in the energy profile have been interpreted in terms of the expected built-in voltage across the p-n junction of the diode as well as contributions from the spontaneous and piezoelectric polarization fields within the material. Additional profile features indicate the presence of two-dimensional electron gas at the upper interface of the InGaN well, and evidence for hole accumulation close to the lower interface.

AB - Electron holography has been used to image electrostatic potential variations across an AlGaN/ InGaN/AlGaN heterojunction diode. Features in the energy profile have been interpreted in terms of the expected built-in voltage across the p-n junction of the diode as well as contributions from the spontaneous and piezoelectric polarization fields within the material. Additional profile features indicate the presence of two-dimensional electron gas at the upper interface of the InGaN well, and evidence for hole accumulation close to the lower interface.

UR - http://www.scopus.com/inward/record.url?scp=0000137743&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000137743&partnerID=8YFLogxK

U2 - 10.1063/1.126577

DO - 10.1063/1.126577

M3 - Article

AN - SCOPUS:0000137743

SN - 0003-6951

VL - 76

SP - 3055

EP - 3057

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

Abstract

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