Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

Martha McCartney, Fernando Ponce, Juan Cai, D. P. Bour

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

Electron holography has been used to image electrostatic potential variations across an AlGaN/ InGaN/AlGaN heterojunction diode. Features in the energy profile have been interpreted in terms of the expected built-in voltage across the p-n junction of the diode as well as contributions from the spontaneous and piezoelectric polarization fields within the material. Additional profile features indicate the presence of two-dimensional electron gas at the upper interface of the InGaN well, and evidence for hole accumulation close to the lower interface.

Original languageEnglish (US)
Pages (from-to)3055-3057
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number21
StatePublished - May 22 2000

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holography
diodes
electrostatics
profiles
p-n junctions
electron gas
heterojunctions
electrons
electric potential
polarization
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography. / McCartney, Martha; Ponce, Fernando; Cai, Juan; Bour, D. P.

In: Applied Physics Letters, Vol. 76, No. 21, 22.05.2000, p. 3055-3057.

Research output: Contribution to journalArticle

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