Abstract
High quality surface passivation (Seff<5cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 1012cm-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN x)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.
| Original language | English (US) |
|---|---|
| Article number | 053503 |
| Journal | Applied Physics Letters |
| Volume | 104 |
| Issue number | 5 |
| DOIs | |
| State | Published - 2014 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells. / Sharma, Vivek; Tracy, Clarence; Schroder, Dieter; Herasimenka, Stanislau; Dauksher, William; Bowden, Stuart.
In: Applied Physics Letters, Vol. 104, No. 5, 053503, 2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells
AU - Sharma, Vivek
AU - Tracy, Clarence
AU - Schroder, Dieter
AU - Herasimenka, Stanislau
AU - Dauksher, William
AU - Bowden, Stuart
PY - 2014
Y1 - 2014
N2 - High quality surface passivation (Seff<5cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 1012cm-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN x)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.
AB - High quality surface passivation (Seff<5cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 1012cm-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN x)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.
UR - http://www.scopus.com/inward/record.url?scp=84899884391&partnerID=8YFLogxK
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U2 - 10.1063/1.4863829
DO - 10.1063/1.4863829
M3 - Article
AN - SCOPUS:84899884391
VL - 104
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 5
M1 - 053503
ER -