Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

Vivek Sharma, Clarence Tracy, Dieter Schroder, Stanislau Herasimenka, William Dauksher, Stuart Bowden

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

High quality surface passivation (Seff<5cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 1012cm-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN x)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.

Original languageEnglish (US)
Article number053503
JournalApplied Physics Letters
Volume104
Issue number5
DOIs
StatePublished - Jan 1 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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