Abstract
High quality surface passivation (Seff<5cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 1012cm-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN x)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.
Original language | English (US) |
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Article number | 053503 |
Journal | Applied Physics Letters |
Volume | 104 |
Issue number | 5 |
DOIs | |
State | Published - Feb 3 2014 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)