Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

Vivek Sharma; Clarence Tracy; Dieter Schroder; Stanislau Herasimenka; William Dauksher; Stuart Bowden

doi:10.1063/1.4863829

Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

Vivek Sharma, Clarence Tracy, Dieter Schroder, Stanislau Herasimenka, William Dauksher, Stuart Bowden

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

High quality surface passivation (S_eff<5cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 10¹²cm^-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN _x)/PECVD Silicon Oxide (SiO₂) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiN_x film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.

Original language	English (US)
Article number	053503
Journal	Applied Physics Letters
Volume	104
Issue number	5
DOIs	https://doi.org/10.1063/1.4863829
State	Published - Feb 3 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "High quality surface passivation (Seff<5cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 1012cm-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN x)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.",

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AU - Sharma, Vivek

AU - Tracy, Clarence

AU - Schroder, Dieter

AU - Herasimenka, Stanislau

AU - Dauksher, William

AU - Bowden, Stuart

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AB - High quality surface passivation (Seff<5cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 1012cm-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN x)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.

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Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

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