Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

Vivek Sharma, Clarence Tracy, Dieter Schroder, Stanislau Herasimenka, William Dauksher, Stuart Bowden

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

High quality surface passivation (Seff<5cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 1012cm-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN x)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.

Original languageEnglish (US)
Article number053503
JournalApplied Physics Letters
Volume104
Issue number5
DOIs
StatePublished - 2014

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silicon nitrides
passivity
manipulators
solar cells
vapor deposition
silicon oxides
charge distribution
coronas
charging
oxide films
requirements
oxides
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells. / Sharma, Vivek; Tracy, Clarence; Schroder, Dieter; Herasimenka, Stanislau; Dauksher, William; Bowden, Stuart.

In: Applied Physics Letters, Vol. 104, No. 5, 053503, 2014.

Research output: Contribution to journalArticle

@article{539a1646fe794650ae20c44f6591e624,
title = "Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells",
abstract = "High quality surface passivation (Seff<5cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 1012cm-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN x)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.",
author = "Vivek Sharma and Clarence Tracy and Dieter Schroder and Stanislau Herasimenka and William Dauksher and Stuart Bowden",
year = "2014",
doi = "10.1063/1.4863829",
language = "English (US)",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

AU - Sharma, Vivek

AU - Tracy, Clarence

AU - Schroder, Dieter

AU - Herasimenka, Stanislau

AU - Dauksher, William

AU - Bowden, Stuart

PY - 2014

Y1 - 2014

N2 - High quality surface passivation (Seff<5cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 1012cm-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN x)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.

AB - High quality surface passivation (Seff<5cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 1012cm-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN x)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.

UR - http://www.scopus.com/inward/record.url?scp=84899884391&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899884391&partnerID=8YFLogxK

U2 - 10.1063/1.4863829

DO - 10.1063/1.4863829

M3 - Article

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 053503

ER -