Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

Vivek Sharma; Clarence Tracy; Dieter Schroder; Stanislau Herasimenka; William Dauksher; Stuart Bowden

doi:10.1063/1.4863829

Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

Vivek Sharma, Clarence Tracy, Dieter Schroder, Stanislau Herasimenka, William Dauksher, Stuart Bowden

Research output: Contribution to journal › Article

15 Scopus citations

Abstract

High quality surface passivation (S_eff<5cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 10¹²cm^-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN _x)/PECVD Silicon Oxide (SiO₂) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiN_x film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.

Original language	English (US)
Article number	053503
Journal	Applied Physics Letters
Volume	104
Issue number	5
DOIs	https://doi.org/10.1063/1.4863829
State	Published - Jan 1 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4863829

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Sharma, V., Tracy, C., Schroder, D., Herasimenka, S., Dauksher, W., & Bowden, S. (2014). Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells. Applied Physics Letters, 104(5), [053503]. https://doi.org/10.1063/1.4863829

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