Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

Vivek Sharma, Clarence Tracy, Dieter Schroder, Stanislau Herasimenka, William Dauksher, Stuart Bowden

Research output: Contribution to journal › Article

11 Citations (Scopus)

Abstract

High quality surface passivation (Seff<5cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 1012cm-2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiN x)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.

Original languageEnglish (US)
Article number053503
JournalApplied Physics Letters
Volume104
Issue number5
DOIs
StatePublished - 2014

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silicon nitrides
passivity
manipulators
solar cells
vapor deposition
silicon oxides
charge distribution
coronas
charging
oxide films
requirements
oxides
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells. / Sharma, Vivek; Tracy, Clarence; Schroder, Dieter; Herasimenka, Stanislau; Dauksher, William; Bowden, Stuart.

In: Applied Physics Letters, Vol. 104, No. 5, 053503, 2014.

Research output: Contribution to journal › Article

Sharma, V, Tracy, C, Schroder, D, Herasimenka, S, Dauksher, W & Bowden, S 2014, 'Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells', Applied Physics Letters, vol. 104, no. 5, 053503. https://doi.org/10.1063/1.4863829
Sharma V, Tracy C, Schroder D, Herasimenka S, Dauksher W, Bowden S. Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells. Applied Physics Letters. 2014;104(5). 053503. https://doi.org/10.1063/1.4863829
Sharma, Vivek ; Tracy, Clarence ; Schroder, Dieter ; Herasimenka, Stanislau ; Dauksher, William ; Bowden, Stuart. / Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells. In: Applied Physics Letters. 2014 ; Vol. 104, No. 5.
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