Manganese-related luminescence in GaInAs/AlInAs multiple quantum wells grown on InP by molecular beam epitaxy

Y. H. Zhang, N. N. Ledentsov, K. Ploog

Research output: Contribution to journalArticle

1 Scopus citations


Two Mn-related luminescence peaks have been observed in a series of nominally undoped Ga0.47In0.53As/Al0.48In0.52As multiple quantum wells (MQW) grown lattice-matched on InP substrates by molecular beam epitaxy. These two peaks correspond to on-center and on-edge impurity states, respectively. The origin of the Mn impurities is outdiffusion from the Fe-doped semiinsulating InP substrate into the epitaxial layer. The binding energy of Mn acceptors, determined to be 53±3 meV in bulk-like Ga0.47In0.53As, increases to 80±5 meV for the on-center Mn state in a 58 Å MQW. The strong well-width dependence of the binding energy is explained in terms of the unique behavior of the Mn impurity in III-V semiconductors. The Mn in Ga0.47In0.53As and Ga0.47In0.53As/Al0.48In0.52As MQWs behaves predominantly as a deep impurity.

Original languageEnglish (US)
Pages (from-to)437-441
Number of pages5
JournalApplied Physics A Solids and Surfaces
Issue number5
StatePublished - Nov 1 1991
Externally publishedYes



  • 73.20.Hb
  • 78.55.Cr
  • 78.65.Fa

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy (miscellaneous)

Cite this