Manganese-related luminescence in GaInAs/AiInAs multiple quantum wells grown on InP by molecular beam epitaxy

Yong-Hang Zhang, N. N. Ledentsov, K. Ploog

Research output: Contribution to journalArticle

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Abstract

Two Mn-related luminescence peaks have -been observed in a series of nominally undoped Ga0.47In0.53As/Al0.48In0.52As multiple quantum wells (MQW) grown lattice-matched on InP substrates by molecular beam epitaxy. These two peaks correspond to on-center and on-edge impurity states, respectively. The origin of the Mn impurities is outdiffusion from the Fe-doped semiinsulating InP substrate into the epitaxial layer. The binding energy of Mn acceptors, determined to be 53 ± 3 meV in bulk-like Ga0.47In0.53As, increases to 80 ± 5 meV for the on-center Mn state in a 58 A MQW. The strong well-width dependence of the binding energy is explained in terms of the unique behavior of the Mn impurity in III-V semiconductors. The Mn in Ga0.47In0.53As and Ga0.47In0.53As/Al0.48In0.52 As MQWs behaves predominantly as a deep impurity.

Original languageEnglish (US)
Pages (from-to)437-441
Number of pages5
JournalApplied Physics A: Solids and Surfaces
Volume53
Issue number5
StatePublished - Nov 1991
Externally publishedYes

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Manganese
Molecular beam epitaxy
Semiconductor quantum wells
manganese
Luminescence
molecular beam epitaxy
quantum wells
Impurities
luminescence
impurities
Binding energy
binding energy
Epitaxial layers
Substrates

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Materials Science(all)

Cite this

Manganese-related luminescence in GaInAs/AiInAs multiple quantum wells grown on InP by molecular beam epitaxy. / Zhang, Yong-Hang; Ledentsov, N. N.; Ploog, K.

In: Applied Physics A: Solids and Surfaces, Vol. 53, No. 5, 11.1991, p. 437-441.

Research output: Contribution to journalArticle

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