Managing Standby and Active Mode Leakage Power in Deep Sub-micron Design

Lawrence T. Clark, Rakesh Patel, Timothy S. Beatty

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Scaling has allowed rising transistor counts per die and increases leakage at an exponential rate, making power a primary constraint in all integrated circuit designs. Future designs must address emerging leakage components due to direct band to band tunneling, through MOSFET oxides and at steep junction doping gradients. In this paper, we describe circuit design techniques for managing leakage power, both during standby and for limiting the leakage power contribution during active operation. The efficacy, design effort, and process ramifications of different approaches are examined. The schemes are primarily aimed at hand-held devices such as cell phones, since the needs for low power are most acute in these markets due to limited battery capacity.

Original languageEnglish (US)
Title of host publicationProceedings of the International Symposium on Low Power Electronics and Design
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages274-279
Number of pages6
Volume2004-January
EditionJanuary
DOIs
StatePublished - 2004
Externally publishedYes
Event2004 International Symposium on Low Power Electronics and Design, ISLPED 2004 - Newport Beach, United States
Duration: Aug 9 2004Aug 11 2004

Other

Other2004 International Symposium on Low Power Electronics and Design, ISLPED 2004
CountryUnited States
CityNewport Beach
Period8/9/048/11/04

Keywords

  • battery lifetime
  • Drowsy mode
  • MTCMOS
  • SRAM leakage control
  • TGSRAM
  • thick gate shadow latch
  • transistor leakage

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Clark, L. T., Patel, R., & Beatty, T. S. (2004). Managing Standby and Active Mode Leakage Power in Deep Sub-micron Design. In Proceedings of the International Symposium on Low Power Electronics and Design (January ed., Vol. 2004-January, pp. 274-279). [1349350] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LPE.2004.241060