Magnitude of the threshold energy for hot electron damage in metal-oxide-semiconductor field effect transistors by hydrogen desorption

K. Hess, B. Tuttle, F. Register, D. K. Ferry

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

Based on the energetics for hydrogen desorption from the interface between silicon and silicon-dioxide, we argue that the hard threshold for this effect may be considerably lower than the previously assumed value (∼3.6 eV). We support these findings further by recent experimental results related to the giant isotope effect in hydrogen related transistor degradation and the fact that degradation occurs also with relatively low supply voltages. We also show that the high threshold energy model is difficult to defend at these low voltages, even though electron-electron interactions provide a mechanism to create hot electrons with energies of ∼3.6 eV.

Original languageEnglish (US)
Pages (from-to)3147-3149
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number20
StatePublished - Nov 15 1999

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hot electrons
metal oxide semiconductors
field effect transistors
desorption
degradation
damage
thresholds
hydrogen
isotope effect
low voltage
electron scattering
transistors
silicon dioxide
energy
electric potential
silicon
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Magnitude of the threshold energy for hot electron damage in metal-oxide-semiconductor field effect transistors by hydrogen desorption. / Hess, K.; Tuttle, B.; Register, F.; Ferry, D. K.

In: Applied Physics Letters, Vol. 75, No. 20, 15.11.1999, p. 3147-3149.

Research output: Contribution to journalArticle

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