Magnetotransport of two-dimensional electron gas in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy

A. Matsumura, J. M. Fernández, T. J. Thornton, S. N. Holmes, J. Zhang, B. A. Joyce

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We have characterized two-dimensional electron gases (2DEGs) in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy. Hall bar structures were fabricated to characterize the structures and magnetotransport measurements were carried out at temperatures down to 0.4 K. Pronounced Shubnikov-de Haas oscillations were observed in the longitudinal magnetoresistance, indicative of high quality 2DEG in the channel. Electron mobilities up to 87,000 cm2 V-1 s-1 with sheet densities about 7 × 1011 cm-2 were obtained at low temperature. Dingle plots of the magnetoresistance vs reciprocal magnetic field were utilized to determine the single-particle relaxation times in order to investigate scattering mechanisms in these structure. The ratio of the transport scattering time derived from electron mobility to the single-particle relaxation time is of the order of 10, indicating that remote impurity scattering is a dominant factor limiting the mobility of our structures. The behaviour of the magnetotransport data is discussed using a model for parallel conduction.

Original languageEnglish (US)
Pages (from-to)399-403
Number of pages5
JournalSolid-State Electronics
Volume40
Issue number1-8
DOIs
StatePublished - Jan 1 1996
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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