Magnetotransport of two-dimensional electron gas in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy

A. Matsumura, J. M. Fernández, Trevor Thornton, S. N. Holmes, J. Zhang, B. A. Joyce

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have characterized two-dimensional electron gases (2DEGs) in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy. Hall bar structures were fabricated to characterize the structures and magnetotransport measurements were carried out at temperatures down to 0.4 K. Pronounced Shubnikov-de Haas oscillations were observed in the longitudinal magnetoresistance, indicative of high quality 2DEG in the channel. Electron mobilities up to 87,000 cm2 V-1 s-1 with sheet densities about 7 × 1011 cm-2 were obtained at low temperature. Dingle plots of the magnetoresistance vs reciprocal magnetic field were utilized to determine the single-particle relaxation times in order to investigate scattering mechanisms in these structure. The ratio of the transport scattering time derived from electron mobility to the single-particle relaxation time is of the order of 10, indicating that remote impurity scattering is a dominant factor limiting the mobility of our structures. The behaviour of the magnetotransport data is discussed using a model for parallel conduction.

Original languageEnglish (US)
Pages (from-to)399-403
Number of pages5
JournalSolid-State Electronics
Volume40
Issue number1-8
DOIs
StatePublished - 1996
Externally publishedYes

Fingerprint

Gas source molecular beam epitaxy
Galvanomagnetic effects
Two dimensional electron gas
electron gas
molecular beam epitaxy
Electron mobility
Modulation
Magnetoresistance
Scattering
electron mobility
modulation
Relaxation time
relaxation time
scattering
gases
plots
Impurities
Magnetic fields
conduction
impurities

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Magnetotransport of two-dimensional electron gas in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy. / Matsumura, A.; Fernández, J. M.; Thornton, Trevor; Holmes, S. N.; Zhang, J.; Joyce, B. A.

In: Solid-State Electronics, Vol. 40, No. 1-8, 1996, p. 399-403.

Research output: Contribution to journalArticle

Matsumura, A. ; Fernández, J. M. ; Thornton, Trevor ; Holmes, S. N. ; Zhang, J. ; Joyce, B. A. / Magnetotransport of two-dimensional electron gas in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy. In: Solid-State Electronics. 1996 ; Vol. 40, No. 1-8. pp. 399-403.
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AU - Zhang, J.

AU - Joyce, B. A.

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