Magnetoresistance oscillations in topological insulator Bi<inf>2</inf>Te<inf>3</inf> nanoscale antidot arrays

Min Song, Jiun Haw Chu, Jian Zhou, Sefaattin Tongay, Kai Liu, Joonki Suh, Henry Chen, Jeong Seuk Kang, Xuecheng Zou, Long You

Research output: Contribution to journalArticle

3 Scopus citations


Nanoscale antidot arrays were fabricated on a single-crystal microflake of topological insulator Bi<inf>2</inf>Te<inf>3</inf>. The introduction of antidot arrays significantly increased the resistance of the microflake, yet the temperature dependence of the resistance remains metallic. We observed that small oscillations that are periodic in magnetic field B appeared on top of the weak anti-localization magnetoresistance. Since the electron coherence length at low temperature becomes comparable to the feature size in our device, we argued that the magnetoresistance oscillations are the manifestation of quantum interference induced by the nanostructure. Our work demonstrates that the transport of topological insulators could indeed be controlled by artificially created nanostructures, and paves the way for future technological applications of this class of materials.

Original languageEnglish (US)
Article number265301
Issue number26
Publication statusPublished - Jul 3 2015
Externally publishedYes



  • antidot array
  • coherence length
  • magnetoresistance
  • reactive ion etching
  • surface states
  • topological insulator

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

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