Magnetoluminescence and resonant electronic Raman scattering investigation of donors and excitons in hydride VPE and MOCVD GaN

Brian Skromme, J. Jayapalan, D. Wang, O. F. Sankey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

The donor and exciton states in ultra high-quality heteroepitaxial GaN grown by hydride vapor phase epitaxy (HVPE) and metallorganic chemical vapor deposition (MOCVD) on sapphire substrates are investigated using low temperature photoluminescence (PL), reflectance, magnetospectroscopy in fields up to 12 T, and resonant electronic Raman scattering (RERS). The A free exciton is confirmed to have a binding energy of about 26.4 meV, independent of strain in the material. Bound n = 2 exciton peaks are distinguished in the PL spectrum by their thermalization and sample dependence. The Si donor is shown to have a binding energy of about 21 meV using Si-doped HVPE samples grown at Epitronics. Up to five additional residual donor species are observed when comparing various HVPE and MOCVD samples. Pronounced temperature-dependence of the two-electron satellites is observed, suggesting the existence of unresolved excited rotator states of the neutral donor-bound exciton. Highly resolved magnetic splitting patterns are observed in the two-electron satellites. A nonperturbative theory of these donor splittings is developed, including anisotropy. Resonant electronic Raman scattering from residual donors is reported, and yields improved linewidths compared to PL.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith
PublisherMRS
Pages537-542
Number of pages6
Volume482
StatePublished - 1997
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

Other

OtherProceedings of the 1997 MRS Fall Meeting
CityBoston, MA, USA
Period12/1/9712/4/97

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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