Magnetoluminescence and resonant electronic Raman scattering investigation of donors and excitons in hydride VPE and MOCVD GaN

Brian Skromme, J. Jayapalan, D. Wang, O. F. Sankey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The donor and exciton states in ultra high-quality heteroepitaxial GaN grown by hydride vapor phase epitaxy (HVPE) and metallorganic chemical vapor deposition (MOCVD) on sapphire substrates are investigated using low temperature photoluminescence (PL), reflectance, magnetospectroscopy in fields up to 12 T, and resonant electronic Raman scattering (RERS). The A free exciton is confirmed to have a binding energy of about 26.4 meV, independent of strain in the material. Bound n = 2 exciton peaks are distinguished in the PL spectrum by their thermalization and sample dependence. The Si donor is shown to have a binding energy of about 21 meV using Si-doped HVPE samples grown at Epitronics. Up to five additional residual donor species are observed when comparing various HVPE and MOCVD samples. Pronounced temperature-dependence of the two-electron satellites is observed, suggesting the existence of unresolved excited rotator states of the neutral donor-bound exciton. Highly resolved magnetic splitting patterns are observed in the two-electron satellites. A nonperturbative theory of these donor splittings is developed, including anisotropy. Resonant electronic Raman scattering from residual donors is reported, and yields improved linewidths compared to PL.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS.R. Phillpot, P.D. Bristowe, D.G. Stroud, J.R. Smith
PublisherMRS
Pages537-542
Number of pages6
Volume482
StatePublished - 1997
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Dec 1 1997Dec 4 1997

Other

OtherProceedings of the 1997 MRS Fall Meeting
CityBoston, MA, USA
Period12/1/9712/4/97

Fingerprint

Vapor phase epitaxy
Metallorganic chemical vapor deposition
Hydrides
Excitons
Raman scattering
Photoluminescence
Binding energy
Satellites
Electrons
Aluminum Oxide
Excited states
Sapphire
Linewidth
Anisotropy
Temperature
LDS 751
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Skromme, B., Jayapalan, J., Wang, D., & Sankey, O. F. (1997). Magnetoluminescence and resonant electronic Raman scattering investigation of donors and excitons in hydride VPE and MOCVD GaN. In S. R. Phillpot, P. D. Bristowe, D. G. Stroud, & J. R. Smith (Eds.), Materials Research Society Symposium - Proceedings (Vol. 482, pp. 537-542). MRS.

Magnetoluminescence and resonant electronic Raman scattering investigation of donors and excitons in hydride VPE and MOCVD GaN. / Skromme, Brian; Jayapalan, J.; Wang, D.; Sankey, O. F.

Materials Research Society Symposium - Proceedings. ed. / S.R. Phillpot; P.D. Bristowe; D.G. Stroud; J.R. Smith. Vol. 482 MRS, 1997. p. 537-542.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Skromme, B, Jayapalan, J, Wang, D & Sankey, OF 1997, Magnetoluminescence and resonant electronic Raman scattering investigation of donors and excitons in hydride VPE and MOCVD GaN. in SR Phillpot, PD Bristowe, DG Stroud & JR Smith (eds), Materials Research Society Symposium - Proceedings. vol. 482, MRS, pp. 537-542, Proceedings of the 1997 MRS Fall Meeting, Boston, MA, USA, 12/1/97.
Skromme B, Jayapalan J, Wang D, Sankey OF. Magnetoluminescence and resonant electronic Raman scattering investigation of donors and excitons in hydride VPE and MOCVD GaN. In Phillpot SR, Bristowe PD, Stroud DG, Smith JR, editors, Materials Research Society Symposium - Proceedings. Vol. 482. MRS. 1997. p. 537-542
Skromme, Brian ; Jayapalan, J. ; Wang, D. ; Sankey, O. F. / Magnetoluminescence and resonant electronic Raman scattering investigation of donors and excitons in hydride VPE and MOCVD GaN. Materials Research Society Symposium - Proceedings. editor / S.R. Phillpot ; P.D. Bristowe ; D.G. Stroud ; J.R. Smith. Vol. 482 MRS, 1997. pp. 537-542
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