Magnetodielectric coupling in nonmagnetic Au/GaAs:Si Schottky barriers

S. Tongay, A. F. Hebard, Y. Hikita, H. Y. Hwang

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Abstract

We report on a heretofore unnoted giant negative magnetocapacitance (>20%) in nonmagnetic Au/GaAs:Si Schottky barriers that we attribute to a magnetic field induced increase in the binding energy of the shallow donor Si impurity atoms. Depletion capacitance (Cdep) dispersion identifies the impurity ionization and capture processes that give rise to a magnetic field dependent density of ionized impurities. Internal photoemission experiments confirm that the large field-induced shifts in the built-in potential, inferred from 1/ C dep 2 vs voltage measurements, are not due to a field-dependent Schottky barrier height, thus requiring a modification of the abrupt junction approximation that accounts for the observed magnetodielectric coupling.

Original languageEnglish (US)
Article number205324
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number20
DOIs
StatePublished - Nov 24 2009

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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