Magnetodielectric coupling in nonmagnetic Au/GaAs:Si Schottky barriers

S. Tongay, A. F. Hebard, Y. Hikita, H. Y. Hwang

    Research output: Contribution to journalArticlepeer-review

    8 Scopus citations

    Abstract

    We report on a heretofore unnoted giant negative magnetocapacitance (>20%) in nonmagnetic Au/GaAs:Si Schottky barriers that we attribute to a magnetic field induced increase in the binding energy of the shallow donor Si impurity atoms. Depletion capacitance (Cdep) dispersion identifies the impurity ionization and capture processes that give rise to a magnetic field dependent density of ionized impurities. Internal photoemission experiments confirm that the large field-induced shifts in the built-in potential, inferred from 1/ C dep 2 vs voltage measurements, are not due to a field-dependent Schottky barrier height, thus requiring a modification of the abrupt junction approximation that accounts for the observed magnetodielectric coupling.

    Original languageEnglish (US)
    Article number205324
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume80
    Issue number20
    DOIs
    StatePublished - Nov 24 2009

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Fingerprint Dive into the research topics of 'Magnetodielectric coupling in nonmagnetic Au/GaAs:Si Schottky barriers'. Together they form a unique fingerprint.

    Cite this