Magneto-quantum tunneling phenomena in AlGaAs/GaAs resonant tunneling diodes

H. M. Yoo, S. M. Goodnick, T. G. Stoebe, J. R. Arthur

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Al.65Ga.35As/GaAs resonant tunneling diodes (RTDs) with asymmetric spacer layers and barrier configurations have been studied via electric and magnetic field measurements. RTDs with an asymmetric barrier configuration exhibit a higher asymmetry in their I-V characteristics than these with asymmetric spacer layers. However, Shubnikovde Hass (SdH) oscillations obtained from the former are comparable for both bias directions while those from the latter exhibit very high asymmetries. The asymmetric spacer layer RTDs display SdH oscillations only when the diodes are biased in such a way that the thick spacer layer is in the leading edge of the diodes in contrast to the RTD with asymmetric barriers.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by IOP Publishing Ltd
Pages227-230
Number of pages4
ISBN (Print)0854984100
StatePublished - Dec 1 1991
Externally publishedYes
EventProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds - Seattle, WA, USA
Duration: Sep 9 1991Sep 12 1991

Publication series

NameInstitute of Physics Conference Series
Volume120
ISSN (Print)0951-3248

Other

OtherProceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds
CitySeattle, WA, USA
Period9/9/919/12/91

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Yoo, H. M., Goodnick, S. M., Stoebe, T. G., & Arthur, J. R. (1991). Magneto-quantum tunneling phenomena in AlGaAs/GaAs resonant tunneling diodes. In Institute of Physics Conference Series (pp. 227-230). (Institute of Physics Conference Series; Vol. 120). Publ by IOP Publishing Ltd.