Abstract
Dense electron plasmas in modulation-doped GaInAs/AlInAs single quantum well structures have been studied with magnetoluminescence at 2 K. An electron-sheet-concentration (ns)-dependent band-gap renormalization is measured in the magnetic field. The data agree well with those measured at zero magnetic field. A rigid effective-mass increase for electrons with different k-states in the conduction band is observed as the ns decreases, which is contrary to the results obtained for an electron-hole plasma in GaInAs/InP quantum well.
Original language | English (US) |
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Pages (from-to) | 919-922 |
Number of pages | 4 |
Journal | Solid State Electronics |
Volume | 37 |
Issue number | 4-6 |
DOIs | |
State | Published - Jan 1 1994 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry