Lumped-element modeling of millimeter-wave HEMT parasitics via full-wave electromagnetic analysis

Yasir Karisan, Cosan Caglayan, Georgios Trichopoulos, Kubilay Sertel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a broadband lumped-element parasitic equivalent circuit extraction procedure based on full-wave modeling of electromagnetic interactions within the pad layout of millimeter-wave high electron mobility transistors (HEMTs). The proposed method is illustrated using a conventional two-finger HEMT topology within a coplanar waveguide environment. The accuracy of the suggested extraction procedure is validated through extensive comparisons between full-wave electromagnetic simulations, and the computed response of the proposed model up to 325 GHz. For the first time, we develop a systematic parameter extraction algorithm for differential device configurations.

Original languageEnglish (US)
Title of host publication2015 Computational Electromagnetics International Workshop, CEM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages48-49
Number of pages2
ISBN (Print)9781467371971
DOIs
StatePublished - Sep 2 2015
Externally publishedYes
EventComputational Electromagnetics International Workshop, CEM 2015 - Izmir, Turkey
Duration: Jul 1 2015Jul 4 2015

Other

OtherComputational Electromagnetics International Workshop, CEM 2015
CountryTurkey
CityIzmir
Period7/1/157/4/15

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computational Mathematics

Cite this

Karisan, Y., Caglayan, C., Trichopoulos, G., & Sertel, K. (2015). Lumped-element modeling of millimeter-wave HEMT parasitics via full-wave electromagnetic analysis. In 2015 Computational Electromagnetics International Workshop, CEM 2015 (pp. 48-49). [7237434] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CEM.2015.7237434