Luminescence properties of charged dislocations in semi-insulating GaN: Zn

S. Srinivasan; J. Cai; O. Contreras; Fernando Ponce; D. C. Look; R. J. Molnar

doi:10.1002/pssc.200390100

Luminescence properties of charged dislocations in semi-insulating GaN: Zn

S. Srinivasan, J. Cai, O. Contreras, Fernando Ponce, D. C. Look, R. J. Molnar

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy have been studied using cathodoluminescence, transmission electron microscopy and electron holography techniques. We have mapped the depletion region in the vicinity of threading dislocations and we show that it is associated with sharp drops in cathodoluminescence (CL) intensity. The monochromatic CL images showed considerable intensity variations across the sample surface. These long-range variations in luminescence intensity were also found to be related to potential fluctuations in the regions between dislocations. Such variations could be due to surface states caused by polarization effects of dislocations and/or various surface treatments.

Original language	English (US)
Title of host publication	Physica Status Solidi C: Conferences
Pages	508-511
Number of pages	4
Edition	1
DOIs	https://doi.org/10.1002/pssc.200390100
State	Published - 2002
Event	2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany Duration: Jul 22 2002 → Jul 25 2002

Other

Other	2nd International Workshop on Nitride Semiconductors, IWN 2002
Country/Territory	Germany
City	Aachen
Period	7/22/02 → 7/25/02

ASJC Scopus subject areas

Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1002/pssc.200390100

Cite this

@inproceedings{8011450ebf8b48ae9b46ec78d38bc572,

title = "Luminescence properties of charged dislocations in semi-insulating GaN: Zn",

abstract = "The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy have been studied using cathodoluminescence, transmission electron microscopy and electron holography techniques. We have mapped the depletion region in the vicinity of threading dislocations and we show that it is associated with sharp drops in cathodoluminescence (CL) intensity. The monochromatic CL images showed considerable intensity variations across the sample surface. These long-range variations in luminescence intensity were also found to be related to potential fluctuations in the regions between dislocations. Such variations could be due to surface states caused by polarization effects of dislocations and/or various surface treatments.",

author = "S. Srinivasan and J. Cai and O. Contreras and Fernando Ponce and Look, {D. C.} and Molnar, {R. J.}",

year = "2002",

doi = "10.1002/pssc.200390100",

language = "English (US)",

pages = "508--511",

booktitle = "Physica Status Solidi C: Conferences",

edition = "1",

note = "2nd International Workshop on Nitride Semiconductors, IWN 2002 ; Conference date: 22-07-2002 Through 25-07-2002",

}

TY - GEN

T1 - Luminescence properties of charged dislocations in semi-insulating GaN

T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002

AU - Srinivasan, S.

AU - Cai, J.

AU - Contreras, O.

AU - Ponce, Fernando

AU - Look, D. C.

AU - Molnar, R. J.

PY - 2002

Y1 - 2002

N2 - The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy have been studied using cathodoluminescence, transmission electron microscopy and electron holography techniques. We have mapped the depletion region in the vicinity of threading dislocations and we show that it is associated with sharp drops in cathodoluminescence (CL) intensity. The monochromatic CL images showed considerable intensity variations across the sample surface. These long-range variations in luminescence intensity were also found to be related to potential fluctuations in the regions between dislocations. Such variations could be due to surface states caused by polarization effects of dislocations and/or various surface treatments.

AB - The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy have been studied using cathodoluminescence, transmission electron microscopy and electron holography techniques. We have mapped the depletion region in the vicinity of threading dislocations and we show that it is associated with sharp drops in cathodoluminescence (CL) intensity. The monochromatic CL images showed considerable intensity variations across the sample surface. These long-range variations in luminescence intensity were also found to be related to potential fluctuations in the regions between dislocations. Such variations could be due to surface states caused by polarization effects of dislocations and/or various surface treatments.

UR - http://www.scopus.com/inward/record.url?scp=28344452006&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28344452006&partnerID=8YFLogxK

U2 - 10.1002/pssc.200390100

DO - 10.1002/pssc.200390100

M3 - Conference contribution

AN - SCOPUS:28344452006

SP - 508

EP - 511

BT - Physica Status Solidi C: Conferences

Y2 - 22 July 2002 through 25 July 2002

ER -

Luminescence properties of charged dislocations in semi-insulating GaN: Zn

Abstract

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this