Luminescence properties of charged dislocations in semi-insulating GaN: Zn

S. Srinivasan, J. Cai, O. Contreras, Fernando Ponce, D. C. Look, R. J. Molnar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy have been studied using cathodoluminescence, transmission electron microscopy and electron holography techniques. We have mapped the depletion region in the vicinity of threading dislocations and we show that it is associated with sharp drops in cathodoluminescence (CL) intensity. The monochromatic CL images showed considerable intensity variations across the sample surface. These long-range variations in luminescence intensity were also found to be related to potential fluctuations in the regions between dislocations. Such variations could be due to surface states caused by polarization effects of dislocations and/or various surface treatments.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Pages508-511
Number of pages4
Edition1
DOIs
StatePublished - 2002
Event2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
Duration: Jul 22 2002Jul 25 2002

Other

Other2nd International Workshop on Nitride Semiconductors, IWN 2002
CountryGermany
CityAachen
Period7/22/027/25/02

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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    Srinivasan, S., Cai, J., Contreras, O., Ponce, F., Look, D. C., & Molnar, R. J. (2002). Luminescence properties of charged dislocations in semi-insulating GaN: Zn. In Physica Status Solidi C: Conferences (1 ed., pp. 508-511) https://doi.org/10.1002/pssc.200390100