Luminescence from stacking faults in gallium nitride

R. Liu; A. Bell; Fernando Ponce; C. Q. Chen; J. W. Yang; M. A. Khan

doi:10.1063/1.1852085

Luminescence from stacking faults in gallium nitride

R. Liu, A. Bell, Fernando Ponce, C. Q. Chen, J. W. Yang, M. A. Khan

Physics

Research output: Contribution to journal › Article › peer-review

343 Scopus citations

Abstract

A direct correlation has been established between stacking faults in a -plane GaN epilayers and luminescence peaks in the 3.29-3.41 eV range. The structural features of the stacking faults were determined by diffraction-contrast transmission electron microscopy, while the optical emission characteristics were observed by highly spatially resolved monochromatic cathodoluminescence. The studies were performed in the exact same regions of thinned foils. We find that stacking faults on the basal plane are responsible for the strong emission at ~3.14 eV. Luminescence peaks at ~3.33 and ~3.29 eV are associated with the presence of stacking faults on prismatic a planes and partial dislocations at the stacking fault boundaries, respectively.

Original language	English (US)
Article number	021908
Pages (from-to)	021908-1-021908-3
Journal	Applied Physics Letters
Volume	86
Issue number	2
DOIs	https://doi.org/10.1063/1.1852085
State	Published - Jan 10 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1852085

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title = "Luminescence from stacking faults in gallium nitride",

abstract = "A direct correlation has been established between stacking faults in a -plane GaN epilayers and luminescence peaks in the 3.29-3.41 eV range. The structural features of the stacking faults were determined by diffraction-contrast transmission electron microscopy, while the optical emission characteristics were observed by highly spatially resolved monochromatic cathodoluminescence. The studies were performed in the exact same regions of thinned foils. We find that stacking faults on the basal plane are responsible for the strong emission at ~3.14 eV. Luminescence peaks at ~3.33 and ~3.29 eV are associated with the presence of stacking faults on prismatic a planes and partial dislocations at the stacking fault boundaries, respectively.",

author = "R. Liu and A. Bell and Fernando Ponce and Chen, {C. Q.} and Yang, {J. W.} and Khan, {M. A.}",

note = "Funding Information: The authors gratefully acknowledge support at Arizona State University from a grant from Nichia Corporation. The work at the University of South Carolina was supported by the Office of Naval Research Contract No. N00014031097 monitored by John Zolper and also partially by DARPA contract monitored by Dr. J. Zavada and Dr. J. Carrano.",

year = "2005",

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doi = "10.1063/1.1852085",

language = "English (US)",

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T1 - Luminescence from stacking faults in gallium nitride

AU - Liu, R.

AU - Bell, A.

AU - Ponce, Fernando

AU - Chen, C. Q.

AU - Yang, J. W.

AU - Khan, M. A.

N1 - Funding Information: The authors gratefully acknowledge support at Arizona State University from a grant from Nichia Corporation. The work at the University of South Carolina was supported by the Office of Naval Research Contract No. N00014031097 monitored by John Zolper and also partially by DARPA contract monitored by Dr. J. Zavada and Dr. J. Carrano.

PY - 2005/1/10

Y1 - 2005/1/10

N2 - A direct correlation has been established between stacking faults in a -plane GaN epilayers and luminescence peaks in the 3.29-3.41 eV range. The structural features of the stacking faults were determined by diffraction-contrast transmission electron microscopy, while the optical emission characteristics were observed by highly spatially resolved monochromatic cathodoluminescence. The studies were performed in the exact same regions of thinned foils. We find that stacking faults on the basal plane are responsible for the strong emission at ~3.14 eV. Luminescence peaks at ~3.33 and ~3.29 eV are associated with the presence of stacking faults on prismatic a planes and partial dislocations at the stacking fault boundaries, respectively.

AB - A direct correlation has been established between stacking faults in a -plane GaN epilayers and luminescence peaks in the 3.29-3.41 eV range. The structural features of the stacking faults were determined by diffraction-contrast transmission electron microscopy, while the optical emission characteristics were observed by highly spatially resolved monochromatic cathodoluminescence. The studies were performed in the exact same regions of thinned foils. We find that stacking faults on the basal plane are responsible for the strong emission at ~3.14 eV. Luminescence peaks at ~3.33 and ~3.29 eV are associated with the presence of stacking faults on prismatic a planes and partial dislocations at the stacking fault boundaries, respectively.

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Luminescence from stacking faults in gallium nitride

Abstract

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