Luminescence efficiency of near-surface quantum wells before and after ion-gun hydrogenation

Ying Lan Chang, I. Hsing Tan, Yong-Hang Zhang, James Merz, Evelyn Hu, A. Frova, V. Emiliani

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We have studied the effects of the proximity of a bare Al 0.3Ga0.7As surface on the luminescence of an underlying GaAs quantum well (QW) before and after hydrogenation. The mechanism which is affected by H is tunneling to surface states through the surface barrier. Its thickness was varied by wet etching from 60 to 350 Å. Our experiments reveal that the degradation of luminescence efficiency from the QW is dependent on the surface barrier thickness and the excitation energy used in the photoluminescence measurements. A complete recovery or even further enhancement of luminescence efficiency was observed in the near-surface QW after low-energy ion-beam hydrogenation, even at room temperature.

Original languageEnglish (US)
Pages (from-to)2697-2699
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number21
DOIs
StatePublished - 1993
Externally publishedYes

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hydrogenation
quantum wells
luminescence
ions
proximity
recovery
ion beams
etching
degradation
photoluminescence
energy
augmentation
room temperature
excitation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Luminescence efficiency of near-surface quantum wells before and after ion-gun hydrogenation. / Chang, Ying Lan; Tan, I. Hsing; Zhang, Yong-Hang; Merz, James; Hu, Evelyn; Frova, A.; Emiliani, V.

In: Applied Physics Letters, Vol. 62, No. 21, 1993, p. 2697-2699.

Research output: Contribution to journalArticle

Chang, Ying Lan ; Tan, I. Hsing ; Zhang, Yong-Hang ; Merz, James ; Hu, Evelyn ; Frova, A. ; Emiliani, V. / Luminescence efficiency of near-surface quantum wells before and after ion-gun hydrogenation. In: Applied Physics Letters. 1993 ; Vol. 62, No. 21. pp. 2697-2699.
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AU - Emiliani, V.

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