Luminescence efficiency of near-surface quantum wells before and after ion-gun hydrogenation

Ying Lan Chang; I. Hsing Tan; Yong Hang Zhang; James Merz; Evelyn Hu; A. Frova; V. Emiliani

doi:10.1063/1.109235

Luminescence efficiency of near-surface quantum wells before and after ion-gun hydrogenation

Ying Lan Chang, I. Hsing Tan, Yong Hang Zhang, James Merz, Evelyn Hu, A. Frova, V. Emiliani

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27 Scopus citations

Abstract

We have studied the effects of the proximity of a bare Al _0.3Ga_0.7As surface on the luminescence of an underlying GaAs quantum well (QW) before and after hydrogenation. The mechanism which is affected by H is tunneling to surface states through the surface barrier. Its thickness was varied by wet etching from 60 to 350 Å. Our experiments reveal that the degradation of luminescence efficiency from the QW is dependent on the surface barrier thickness and the excitation energy used in the photoluminescence measurements. A complete recovery or even further enhancement of luminescence efficiency was observed in the near-surface QW after low-energy ion-beam hydrogenation, even at room temperature.

Original language	English (US)
Pages (from-to)	2697-2699
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	21
DOIs	https://doi.org/10.1063/1.109235
State	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Luminescence efficiency of near-surface quantum wells before and after ion-gun hydrogenation",

abstract = "We have studied the effects of the proximity of a bare Al 0.3Ga0.7As surface on the luminescence of an underlying GaAs quantum well (QW) before and after hydrogenation. The mechanism which is affected by H is tunneling to surface states through the surface barrier. Its thickness was varied by wet etching from 60 to 350 {\AA}. Our experiments reveal that the degradation of luminescence efficiency from the QW is dependent on the surface barrier thickness and the excitation energy used in the photoluminescence measurements. A complete recovery or even further enhancement of luminescence efficiency was observed in the near-surface QW after low-energy ion-beam hydrogenation, even at room temperature.",

author = "Chang, {Ying Lan} and Tan, {I. Hsing} and Zhang, {Yong Hang} and James Merz and Evelyn Hu and A. Frova and V. Emiliani",

year = "1993",

doi = "10.1063/1.109235",

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T1 - Luminescence efficiency of near-surface quantum wells before and after ion-gun hydrogenation

AU - Chang, Ying Lan

AU - Tan, I. Hsing

AU - Zhang, Yong Hang

AU - Merz, James

AU - Hu, Evelyn

AU - Frova, A.

AU - Emiliani, V.

PY - 1993

Y1 - 1993

N2 - We have studied the effects of the proximity of a bare Al 0.3Ga0.7As surface on the luminescence of an underlying GaAs quantum well (QW) before and after hydrogenation. The mechanism which is affected by H is tunneling to surface states through the surface barrier. Its thickness was varied by wet etching from 60 to 350 Å. Our experiments reveal that the degradation of luminescence efficiency from the QW is dependent on the surface barrier thickness and the excitation energy used in the photoluminescence measurements. A complete recovery or even further enhancement of luminescence efficiency was observed in the near-surface QW after low-energy ion-beam hydrogenation, even at room temperature.

AB - We have studied the effects of the proximity of a bare Al 0.3Ga0.7As surface on the luminescence of an underlying GaAs quantum well (QW) before and after hydrogenation. The mechanism which is affected by H is tunneling to surface states through the surface barrier. Its thickness was varied by wet etching from 60 to 350 Å. Our experiments reveal that the degradation of luminescence efficiency from the QW is dependent on the surface barrier thickness and the excitation energy used in the photoluminescence measurements. A complete recovery or even further enhancement of luminescence efficiency was observed in the near-surface QW after low-energy ion-beam hydrogenation, even at room temperature.

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ER -

Luminescence efficiency of near-surface quantum wells before and after ion-gun hydrogenation

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