Luminescence dynamics in Ga(AsBi)

Sebastian Imhof; Christian Wagner; Angela Thränhardt; Alexej Chernikov; Martin Koch; Niko S. Köster; Sangam Chatterjee; Stephan W. Koch; Oleg Rubel; Xianfeng Lu; Shane Johnson; Daniel A. Beaton; Thomas Tiedje

doi:10.1063/1.3580773

Luminescence dynamics in Ga(AsBi)

Sebastian Imhof, Christian Wagner, Angela Thränhardt, Alexej Chernikov, Martin Koch, Niko S. Köster, Sangam Chatterjee, Stephan W. Koch, Oleg Rubel, Xianfeng Lu, Shane Johnson, Daniel A. Beaton, Thomas Tiedje

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The temporal evolution of the spectrally resolved luminescence is measured for a Ga(AsBi) sample at low temperatures. The results are analyzed with the help of kinetic Monte Carlo simulations incorporating two disorder scales attributed to alloy disorder and Bi- clustering. An average time of 5 ps is identified as the upper limit for carrier capture into the Bi clusters whereas the extracted hopping rate associated with alloy fluctuations is much faster than the transitions between the individual cluster sites.

Original language	English (US)
Article number	161104
Journal	Applied Physics Letters
Volume	98
Issue number	16
DOIs	https://doi.org/10.1063/1.3580773
State	Published - Apr 18 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3580773

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@article{17980d6861a646308f768a723c14927b,

title = "Luminescence dynamics in Ga(AsBi)",

abstract = "The temporal evolution of the spectrally resolved luminescence is measured for a Ga(AsBi) sample at low temperatures. The results are analyzed with the help of kinetic Monte Carlo simulations incorporating two disorder scales attributed to alloy disorder and Bi- clustering. An average time of 5 ps is identified as the upper limit for carrier capture into the Bi clusters whereas the extracted hopping rate associated with alloy fluctuations is much faster than the transitions between the individual cluster sites.",

author = "Sebastian Imhof and Christian Wagner and Angela Thr{\"a}nhardt and Alexej Chernikov and Martin Koch and K{\"o}ster, {Niko S.} and Sangam Chatterjee and Koch, {Stephan W.} and Oleg Rubel and Xianfeng Lu and Shane Johnson and Beaton, {Daniel A.} and Thomas Tiedje",

note = "Funding Information: We gratefully acknowledge financial support through the Materials World Network: III–V Bismide Materials for IR and Mid IR Semiconductors. ",

year = "2011",

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doi = "10.1063/1.3580773",

language = "English (US)",

volume = "98",

journal = "Applied Physics Letters",

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T1 - Luminescence dynamics in Ga(AsBi)

AU - Imhof, Sebastian

AU - Wagner, Christian

AU - Thränhardt, Angela

AU - Chernikov, Alexej

AU - Koch, Martin

AU - Köster, Niko S.

AU - Chatterjee, Sangam

AU - Koch, Stephan W.

AU - Rubel, Oleg

AU - Lu, Xianfeng

AU - Johnson, Shane

AU - Beaton, Daniel A.

AU - Tiedje, Thomas

N1 - Funding Information: We gratefully acknowledge financial support through the Materials World Network: III–V Bismide Materials for IR and Mid IR Semiconductors.

PY - 2011/4/18

Y1 - 2011/4/18

N2 - The temporal evolution of the spectrally resolved luminescence is measured for a Ga(AsBi) sample at low temperatures. The results are analyzed with the help of kinetic Monte Carlo simulations incorporating two disorder scales attributed to alloy disorder and Bi- clustering. An average time of 5 ps is identified as the upper limit for carrier capture into the Bi clusters whereas the extracted hopping rate associated with alloy fluctuations is much faster than the transitions between the individual cluster sites.

AB - The temporal evolution of the spectrally resolved luminescence is measured for a Ga(AsBi) sample at low temperatures. The results are analyzed with the help of kinetic Monte Carlo simulations incorporating two disorder scales attributed to alloy disorder and Bi- clustering. An average time of 5 ps is identified as the upper limit for carrier capture into the Bi clusters whereas the extracted hopping rate associated with alloy fluctuations is much faster than the transitions between the individual cluster sites.

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U2 - 10.1063/1.3580773

DO - 10.1063/1.3580773

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VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 161104

ER -

Luminescence dynamics in Ga(AsBi)

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