Abstract
The effects of luminescence coupling on the external quantum efficiency (EQE) measurement of an InGaP/InGaAs/Ge triple junction solar cell were investigated. A small signal model was used to study the interaction of the subcells during EQE measurement. It was found that an optical-electrical feedback mechanism results in EQE measurement artifacts. Measurements of luminescence from the InGaP p-n junction are also performed to quantitatively determine the strength of the luminescence coupling. These results offer a more thorough and comprehensive interpretation of EQE measurement results that are needed for the design and accurate performance evaluation of high-efficiency multijunction solar cells. The effects demonstrated here can also be used to measure the spontaneous emission efficiency of the subcells, which is useful for nondestructive assessment of multijunction solar cell material quality.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 344-350 |
| Number of pages | 7 |
| Journal | Progress in Photovoltaics: Research and Applications |
| Volume | 21 |
| Issue number | 3 |
| DOIs | |
| State | Published - May 1 2013 |
Keywords
- EQE, quantum efficiency
- GaAs, GaInP, Ge
- electroluminescence
- luminescence coupling, photon coupling, optical coupling
- measurement artifact
- multi-junction
- photoluminescence
- small signal analysis
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Condensed Matter Physics
- Electrical and Electronic Engineering