Luminescence above the Tauc gap in a-Si: H

P. M. Fauchet, I. H. Campbell, S. A. Lyon, Robert Nemanich

Research output: Contribution to journalArticle

Abstract

We report the first observation and full characterization of the weak photoluminescence signal at and above the Tauc gap in a-Si:H. Detailed spectral dependence on temperature (from 10 K to 500 K), Tauc gap, deep defect density and laser power density is reported. The origin of the signal is discussed in terms of the carrier dynamics.

Original languageEnglish (US)
Pages (from-to)277-279
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume114
Issue numberPART 1
DOIs
Publication statusPublished - Dec 1 1989
Externally publishedYes

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ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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