We report the first observation and full characterization of the weak photoluminescence signal at and above the Tauc gap in a-Si:H. Detailed spectral dependence on temperature (from 10 K to 500 K), Tauc gap, deep defect density and laser power density is reported. The origin of the signal is discussed in terms of the carrier dynamics.
ASJC Scopus subject areas
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials