Future nanoscale memory technologies must ultimately be able to operate at power supply voltages in the order of 0.6V or less. We have demonstrated in this work that it is possible to utilize symmetric program-erase (P-E) cycling for Ag/Ag-Ge-S/W programmable metallization cell devices at voltages below 0.6V and still maintain an OFF/ON resistance ratio well in excess or 10 over a wide range of program and erase currents (0.27, 1.6, 55 and 220 μA) as set by a series resistance. The distributions of resistance values for 104 P-E cycles indicate that the margins between the highest on-and lowest off-state resistances are sufficient for unambiguous differentiation in all but the lowest current case in which there is some overlap. In addition, there is no substantial change in switching speed for up to 1.5 × 106 P-E operations, the maximum number of cycles attempted in this study.

Original languageEnglish (US)
Article number254017
Issue number25
Publication statusPublished - Jun 24 2011


ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

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