Low thermal conductance transition edge sensor (TES) for SPICA

P. Khosropanah; B. Dirks; J. Van Der Kuur; M. Ridder; M. Bmijn; M. Popescu; H. Hoevers; J. R. Gao; D. Morozov; P. Mauskopf

doi:10.1063/1.3292369

Low thermal conductance transition edge sensor (TES) for SPICA

P. Khosropanah, B. Dirks, J. Van Der Kuur, M. Ridder, M. Bmijn, M. Popescu, H. Hoevers, J. R. Gao, D. Morozov, P. Mauskopf

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

17 Scopus citations

Abstract

We fabricated and characterized low thermal conductance transition edge sensors (TES) for SAFARI instrument on SPICA. The device is based on a superconducting Ti/Au bilayer deposited on suspended SiN membrane. The critical temperature of the device is 113 mK. The low thermal conductance is realized by using long and narrow SiN supporting legs. All measurements were performed having the device in a light-tight box, which to a great extent eliminates the loading of the background radiation. We measured the current-voltage (IV) characteristics of the device in different bath temperatures and determine the thermal conductance (G) to be equal to 320 fW/K. This value corresponds to a noise equivalent power (NEP) of 3x10^-19 W/√HZ. The current noise and complex impedance is also measured at different bias points at 55 mK bath temperature. The measured electrical (dark) NEP is 1x10^-18W/ √HZ, which is about a factor of 3 higher than what we expect from the thermal conductance that comes out of the IV curves. Despite using a light-tight box, the photon noise might still be the source of this excess noise. We also measured the complex impedance of the same device at several bias points. Fitting a simple first order thermal-electrical model to the measured data, we fmd an effective time constant of about 2.7 ms and a thermal capacity of 13 fJ/K in the middle of the transition.

Original language	English (US)
Title of host publication	Low Temperature Detectors LTD-13 - Proceedings of the 13th International Workshop
Pages	42-47
Number of pages	6
DOIs	https://doi.org/10.1063/1.3292369
State	Published - 2009
Externally published	Yes
Event	13th International Workshop on Low Temperature Detectors, LTD-13 - Stanford, CA, United States Duration: Jul 20 2009 → Jul 24 2009

Publication series

Name	AIP Conference Proceedings
Volume	1185
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	13th International Workshop on Low Temperature Detectors, LTD-13
Country/Territory	United States
City	Stanford, CA
Period	7/20/09 → 7/24/09

Keywords

Far infra-red spectrometer
SiN membrane
Submm spectrometer
TES
Transition-edge sensor

ASJC Scopus subject areas

Ecology, Evolution, Behavior and Systematics
Ecology
Plant Science
General Physics and Astronomy
Nature and Landscape Conservation

Access to Document

10.1063/1.3292369

Cite this

Khosropanah, P., Dirks, B., Van Der Kuur, J., Ridder, M., Bmijn, M., Popescu, M., Hoevers, H., Gao, J. R., Morozov, D., & Mauskopf, P. (2009). Low thermal conductance transition edge sensor (TES) for SPICA. In Low Temperature Detectors LTD-13 - Proceedings of the 13th International Workshop (pp. 42-47). (AIP Conference Proceedings; Vol. 1185). https://doi.org/10.1063/1.3292369

Khosropanah, P, Dirks, B, Van Der Kuur, J, Ridder, M, Bmijn, M, Popescu, M, Hoevers, H, Gao, JR, Morozov, D & Mauskopf, P 2009, Low thermal conductance transition edge sensor (TES) for SPICA. in Low Temperature Detectors LTD-13 - Proceedings of the 13th International Workshop. AIP Conference Proceedings, vol. 1185, pp. 42-47, 13th International Workshop on Low Temperature Detectors, LTD-13, Stanford, CA, United States, 7/20/09. https://doi.org/10.1063/1.3292369

@inproceedings{c4352f1cb12440748f7927d62cfcf71c,

title = "Low thermal conductance transition edge sensor (TES) for SPICA",

abstract = "We fabricated and characterized low thermal conductance transition edge sensors (TES) for SAFARI instrument on SPICA. The device is based on a superconducting Ti/Au bilayer deposited on suspended SiN membrane. The critical temperature of the device is 113 mK. The low thermal conductance is realized by using long and narrow SiN supporting legs. All measurements were performed having the device in a light-tight box, which to a great extent eliminates the loading of the background radiation. We measured the current-voltage (IV) characteristics of the device in different bath temperatures and determine the thermal conductance (G) to be equal to 320 fW/K. This value corresponds to a noise equivalent power (NEP) of 3x10-19 W/√HZ. The current noise and complex impedance is also measured at different bias points at 55 mK bath temperature. The measured electrical (dark) NEP is 1x10-18W/ √HZ, which is about a factor of 3 higher than what we expect from the thermal conductance that comes out of the IV curves. Despite using a light-tight box, the photon noise might still be the source of this excess noise. We also measured the complex impedance of the same device at several bias points. Fitting a simple first order thermal-electrical model to the measured data, we fmd an effective time constant of about 2.7 ms and a thermal capacity of 13 fJ/K in the middle of the transition.",

keywords = "Far infra-red spectrometer, SiN membrane, Submm spectrometer, TES, Transition-edge sensor",

author = "P. Khosropanah and B. Dirks and {Van Der Kuur}, J. and M. Ridder and M. Bmijn and M. Popescu and H. Hoevers and Gao, {J. R.} and D. Morozov and P. Mauskopf",

year = "2009",

doi = "10.1063/1.3292369",

language = "English (US)",

isbn = "9780735407510",

series = "AIP Conference Proceedings",

pages = "42--47",

booktitle = "Low Temperature Detectors LTD-13 - Proceedings of the 13th International Workshop",

}

TY - GEN

T1 - Low thermal conductance transition edge sensor (TES) for SPICA

AU - Khosropanah, P.

AU - Dirks, B.

AU - Van Der Kuur, J.

AU - Ridder, M.

AU - Bmijn, M.

AU - Popescu, M.

AU - Hoevers, H.

AU - Gao, J. R.

AU - Morozov, D.

AU - Mauskopf, P.

PY - 2009

Y1 - 2009

N2 - We fabricated and characterized low thermal conductance transition edge sensors (TES) for SAFARI instrument on SPICA. The device is based on a superconducting Ti/Au bilayer deposited on suspended SiN membrane. The critical temperature of the device is 113 mK. The low thermal conductance is realized by using long and narrow SiN supporting legs. All measurements were performed having the device in a light-tight box, which to a great extent eliminates the loading of the background radiation. We measured the current-voltage (IV) characteristics of the device in different bath temperatures and determine the thermal conductance (G) to be equal to 320 fW/K. This value corresponds to a noise equivalent power (NEP) of 3x10-19 W/√HZ. The current noise and complex impedance is also measured at different bias points at 55 mK bath temperature. The measured electrical (dark) NEP is 1x10-18W/ √HZ, which is about a factor of 3 higher than what we expect from the thermal conductance that comes out of the IV curves. Despite using a light-tight box, the photon noise might still be the source of this excess noise. We also measured the complex impedance of the same device at several bias points. Fitting a simple first order thermal-electrical model to the measured data, we fmd an effective time constant of about 2.7 ms and a thermal capacity of 13 fJ/K in the middle of the transition.

AB - We fabricated and characterized low thermal conductance transition edge sensors (TES) for SAFARI instrument on SPICA. The device is based on a superconducting Ti/Au bilayer deposited on suspended SiN membrane. The critical temperature of the device is 113 mK. The low thermal conductance is realized by using long and narrow SiN supporting legs. All measurements were performed having the device in a light-tight box, which to a great extent eliminates the loading of the background radiation. We measured the current-voltage (IV) characteristics of the device in different bath temperatures and determine the thermal conductance (G) to be equal to 320 fW/K. This value corresponds to a noise equivalent power (NEP) of 3x10-19 W/√HZ. The current noise and complex impedance is also measured at different bias points at 55 mK bath temperature. The measured electrical (dark) NEP is 1x10-18W/ √HZ, which is about a factor of 3 higher than what we expect from the thermal conductance that comes out of the IV curves. Despite using a light-tight box, the photon noise might still be the source of this excess noise. We also measured the complex impedance of the same device at several bias points. Fitting a simple first order thermal-electrical model to the measured data, we fmd an effective time constant of about 2.7 ms and a thermal capacity of 13 fJ/K in the middle of the transition.

KW - Far infra-red spectrometer

KW - SiN membrane

KW - Submm spectrometer

KW - TES

KW - Transition-edge sensor

UR - http://www.scopus.com/inward/record.url?scp=74349092274&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74349092274&partnerID=8YFLogxK

U2 - 10.1063/1.3292369

DO - 10.1063/1.3292369

M3 - Conference contribution

AN - SCOPUS:74349092274

SN - 9780735407510

T3 - AIP Conference Proceedings

SP - 42

EP - 47

BT - Low Temperature Detectors LTD-13 - Proceedings of the 13th International Workshop

T2 - 13th International Workshop on Low Temperature Detectors, LTD-13

Y2 - 20 July 2009 through 24 July 2009

ER -

Low thermal conductance transition edge sensor (TES) for SPICA

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this