Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing

Maxime G. Lemaitre, Sefaattin Tongay, Xiaotie Wang, Dinesh K. Venkatachalam, Joel Fridmann, Brent P. Gila, Arthur F. Hebard, Fan Ren, Robert G. Elliman, Bill R. Appleton

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15 Scopus citations

Abstract

A technique is presented to selectively graphitize regions of SiC by ion implantation and pulsed laser annealing (PLA). Nanoscale features are patterned over large areas by multi-ion beam lithography and subsequently converted to few-layer graphene via PLA in air. Graphitization occurs only where ions have been implanted and without elevating the temperature of the surrounding substrate. Samples were characterized using Raman spectroscopy, ion scattering/channeling, SEM, and AFM, from which the degree of graphitization was determined to vary with implantation species, damage and dose, laser fluence, and pulsing. Contrasting growth regimes and graphitization mechanisms during PLA are discussed.

Original languageEnglish (US)
Article number193105
JournalApplied Physics Letters
Volume100
Issue number19
DOIs
StatePublished - May 7 2012
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lemaitre, M. G., Tongay, S., Wang, X., Venkatachalam, D. K., Fridmann, J., Gila, B. P., Hebard, A. F., Ren, F., Elliman, R. G., & Appleton, B. R. (2012). Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing. Applied Physics Letters, 100(19), [193105]. https://doi.org/10.1063/1.4707383